.PARAM R_delay={RD}
.PARAM R1={A0/(gm_mos*RD)}
.PARAM Ro_1=20
.PARAM R_rise_fall=1000
.PARAM VCCP_enhance=150m
.PARAM VCCN_enhance=-1100m
.PARAM V_DPROT=150m
.PARAM Vd_compensazione=-788.4u
.MODEL MOS_N NMOS LEVEL=1 VTO=+0.65 KP=100E-6
.MODEL DIODE_rf D LEVEL=1 IS=10E-15 N=1 CJO=10f
.MODEL DIODE_NOVd D LEVEL=1 IS=10E-15 N=0.001
.MODEL DIODE_VLIM D LEVEL=1 IS=0.8E-15
.MODEL DIODE_ILIM D LEVEL=1 IS=0.8E-15
*
*******************************************************************************
.ENDS TS3011
*******************************************************
******* SUBCKT VOLTAGE CONTROLLED CAPACITOR for ***
*******************************************************
.SUBCKT VCCAP_PSPICE Vctrl_plus Vctrl_minus Vout_plus Vout_minus
+ PARAMS: CAP_scale=1u Rserie=1
EVin 2 0 VALUE={1/V(Vctrl_plus,Vctrl_minus)}
EV2 8 Vout_plus POLY(2) 6 0 2 0 0 0 0 0 1 0 0 0 0 0
RR1 8 Vout_minus {Rserie}
GI1 0 6 Vout_minus 8 {1/Rserie}
RR2 0 6 100G
CC1 6 0 {CAP_scale}
.ENDS VCCAP_PSPICE
*********************************************************
