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BQ24707充电芯片上电后HIDRV侧的NMOS烧毁

Other Parts Discussed in Thread: BQ24707, BQ24707A

使用BQ24707制作的充电板,在上电后,充电参数配置正确,但是过几秒后DHIDRV侧的MOS烧毁。   下面是充电的参数,以及测试的电压:

设计参数为:8.6-24V输入;4A充电;8.6V的充电电压。

主要的电压测量如下:
输入电压 :11.86V
ILIM电压 : 0.8V
ACDET电压:3.19V
REGN 电压: 6V
BTST电压: 10.75V
请问可能是什么原因。附件中是原理图,与BQ24707的示例基本相同。 1602.ChargeByIC.pdf