在EMB1499Q的datasheet中,Figure 6 (Charge direction)的MOSFET控制信号里有85ns的时间,CLAMP电容两端的MOSFET(GATE_LS和PWM_CLAMP)同时导通,电容两端短路,迅速放电,同时产生高电流尖峰。
请问在系统设计中,这项问题是如何避免的呢?
谢谢!
Kyle
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