在文章的第七页直接说LM3478的栅极驱动电流为0.3A。我查数据手册，始终很费解在哪里得知的，希望大神求解，
The rated drain voltage for the MOSFET must be higher than VIN+VOUT. Si4442DY (RDS(ON) = 8 mΩ and
QGD = 10 nC) is selected in this design. The gate drive current IG of the LM3478 is 0.3A. The estimated
power loss is:snva168e.pdf
