其他微控制器论坛 - 最近的话题

DLPLCRC410EVM: 硬件有问题，故障灯红色亮

Shaohua Lu — Tue, 10 Nov 2026 06:56:45 GMT

Part Number: DLPLCRC410EVM

C2000WARE: TMDSCNCD28P55X

david_wzn — Sat, 31 Oct 2026 09:25:44 GMT

Part Number: C2000WARE

I buy four piece of control card TMDSCNCD28P55X and received them today. use software : Code Composer Studio Version: 12.8.0.00012 ;

I try one Piece just now and do below step :

1, connect usb wire to usb connector J3 on control card;

2, Import a project (C:\ti\c2000\C2000Ware_5_04_00_00\driverlib\f28p55x\examples\adc\adc_ex1_soc_software) in CCS

3, when I click debug button, the CCS pop out a dialog, ask for upgrad XDS110, I click update button; upgrade finish, the software debugging is running in CCS.

4, then I try to import another project(C:\ti\c2000\C2000Ware_5_04_00_00\driverlib\f28p55x\examples\epwm\epwm_ex1_trip_zone)

5,After I building epwm_ex1_trip_zone, click debug button, CCS pop out below ERROR;

What can I do to redebugging on this control card?

thanks ,

Wangzhenning

Error initializing emulator:
(Error -260 @ 0x0)
An attempt to connect to the XDS110 failed.
The cause may be one or more of: no XDS110 is connected, invalid
firmware update, invalid XDS110 serial number, or faulty USB
cable. The firmware and serial number may be updated using the
xdsdfu utility found in the .../ccs_base/common/uscif/xds110
directory of your installation. View the XDS110SupportReadMe.pdf
file there for instructions.
(Emulation package 12.8.0.00189)

RE: C2000WARE: TMDSCNCD28P55X

Daniel — Mon, 02 Nov 2026 01:27:49 GMT

您好

已经收到了您的案例，调查需要些时间，感谢您的耐心等待

PMP41042: Where to source/buy custom magnetic components (RLTI-1310 & VT-22247A) for PMP41042 reference design?

Leon Hsieh — Thu, 29 Oct 2026 08:48:10 GMT

Part Number: PMP41042

Hello everyone,

I am currently working on a project based on the TI PMP41042 reference design (3.6kW Bi-directional CLLLC Resonant Converter).

To build and evaluate our prototype hardware, I am looking to procure/source two of the custom magnetic components specified in the Design Files / BOM:

RLTI-1310 (Main Transformer / Inductor)
VT-22247A (Auxiliary / Resonant Transformer / Inductor)

Could anyone advise on:

Which vendors/manufacturers produced these specific part numbers for the PMP41042 design?
Is there a way to order sample quantities directly, or can TI/vendors share the detailed engineering drawings/spec sheets so we can request a custom build from local magnetics vendors?

Any pointers, vendor contact info, or spec datasheets would be greatly appreciated.

Thank you very much for your time and assistance!

Best regards,

AM5708: Data on the DDR3 pin delay for the AM5708, please. Thank you.

qby chu — Wed, 21 Oct 2026 08:45:02 GMT

Part Number: AM5708

Data on the DDR3 pin delay for the AM5708, please. Thank you.

RE: AM5708: Data on the DDR3 pin delay for the AM5708, please. Thank you.

Vivian Gao — Thu, 29 Oct 2026 05:43:25 GMT

TI didn’t provide this parameter

TPS65987D: 现在TPS65987DDHRSHR这个不推荐新设计了，请问你们有新的替代吗？另外这个后续生命周期会到多久？有没有EOL的时间？

xunjuan huang — Tue, 27 Oct 2026 08:43:52 GMT

Part Number: TPS65987D

现在TPS65987DDHRSHR这个不推荐新设计了，请问你们有新的替代吗？另外这个后续生命周期会到多久？有没有EOL的时间？

RE: TPS65987D: 现在TPS65987DDHRSHR这个不推荐新设计了，请问你们有新的替代吗？另外这个后续生命周期会到多久？有没有EOL的时间？

FRANK1 — Wed, 28 Oct 2026 06:34:48 GMT

TPS25751是它的相似替代品。

https://www.ti.com/product/TPS25751

后续生命周期和EOL这个我们查询不到，后面是last time buy, 最后是EOL。

请查阅TI政策。

Product life cycle | TI.com

RE: TPS65987D: 现在TPS65987DDHRSHR这个不推荐新设计了，请问你们有新的替代吗？另外这个后续生命周期会到多久？有没有EOL的时间？

FRANK1 — Wed, 28 Oct 2026 00:46:14 GMT

感谢您对TI产品的关注！关于你的咨询，我们正在确认您的问题，感谢您的耐心等待。

RE: TAS5805M: CS3651959: TAS5805芯片问题的后续

Daniel — Tue, 27 Oct 2026 06:47:39 GMT

您好

[quote userid="184746" url="~/support/microcontrollers/other/f/other-microcontrollers-forum/1100594/tas5805m-cs3651959-tas5805"]我们目前用"写入后回读一致"来判断寄存器是否写成功，这种判断方式应该是否成立的？[/quote]

可以，至少可以厘清不是写入错误。

[quote userid="184746" url="~/support/microcontrollers/other/f/other-microcontrollers-forum/1100594/tas5805m-cs3651959-tas5805"]请问 TI 推荐的、可靠的写入验证方法是什么？[/quote]

https://www.ti.com.cn/tool/cn/PUREPATHCONSOLE

[quote userid="184746" url="~/support/microcontrollers/other/f/other-microcontrollers-forum/1100594/tas5805m-cs3651959-tas5805"]2.我们注意到 Book 0x00 / Page 0x00 的 0x7D、这个寄存器没有在数据手册中公开。请问 0x7D 的具体作用是什么？它的值是否会影响声音输出？回读值与写入值不一致是否属于正常现象？[/quote]

校验用的一般不影响输出。

[quote userid="184746" url="~/support/microcontrollers/other/f/other-microcontrollers-forum/1100594/tas5805m-cs3651959-tas5805"]

数据手册中提到可通过任意 Book 的 Page0 / Reg 0x7E（CRC 校验和）来校验 I2C 写入。我们是否可以采用"写完整个配置后读取 0x7E 的 CRC 值，与期望值比对"作为整包写入正确性的判据？如果可以，能否提供我们这份 .h 配置对应的期望 CRC 值，或告知如何用 PPC3 计算得到？

[/quote]

关于这个官方没有针对的资料分享。

TAS5805M: CS3651959: TAS5805芯片问题的后续

XUPENG HUANG — Sun, 25 Oct 2026 07:11:39 GMT

Part Number: TAS5805M

我们用"读取寄存器默认值"以及"整包配置写入+回读比对"做了进一步验证，现将最新测试情况汇报如下：

一、测试方法

使用从 PPC3 导出的 .h 配置文件，通过 STM32 按顺序对 TAS5805 执行写入，并对每个写入地址做回读比对；
同时与 TAS5805M 评估板（EVM）的写入效果做对照。

二、测试结果

整包配置写入后，逐地址回读比对，绝大部分寄存器写入与读出一致，仅有以下几处不一致：

Book 0x00 / Page 0x00 / Reg 0x7D：写入 0x11，实际回读可能是 0xFF 或 0x00；

2.Book 0x00 / Page 0x00 / Reg 0x01：写入 0x11，实际回读可能是 0xFF 或 0x00；

3.Book 0x00 / Page 0x00 / Reg 0x78：写入 0x80，实际回读可能是 0xFF 或 0x00；

三、想请教的问题

我们目前用"写入后回读一致"来判断寄存器是否写成功，这种判断方式应该是否成立的？请问 TI 推荐的、可靠的写入验证方法是什么？

2.我们注意到 Book 0x00 / Page 0x00 的 0x7D、这个寄存器没有在数据手册中公开。请问 0x7D 的具体作用是什么？它的值是否会影响声音输出？回读值与写入值不一致是否属于正常现象？

3.数据手册中提到可通过任意 Book 的 Page0 / Reg 0x7E（CRC 校验和）来校验 I2C 写入。我们是否可以采用"写完整个配置后读取 0x7E 的 CRC 值，与期望值比对"作为整包写入正确性的判据？如果可以，能否提供我们这份 .h 配置对应的期望 CRC 值，或告知如何用 PPC3 计算得到？

期待您的回复，感谢！

RE: TAS5805M: CS3651959: TAS5805芯片问题的后续

Eirwen — Sun, 25 Oct 2026 22:56:13 GMT

已经收到了您的案例，调查需要些时间，感谢您的耐心等待。

RE: AM5708: Data on the DDR3 pin delay for the AM5708, please. Thank you.

Alice — Wed, 21 Oct 2026 22:00:56 GMT

您好，
已经收到了您的案例，调查需要些时间，感谢您的耐心等待。

RE: TIDM-02013: Academic Inquiry: VT-20163B (WT-20163B) Integrated Magnetics for TIDM-02013

Alice — Mon, 21 Sep 2026 06:48:36 GMT

您好，

很遗憾，我们没有变压器的内部结构。

但在链接的帖子中提供了VT-20163的数据手册。

PMP22650: VI-20174A - Simulation, hardware & system design tools forum - Simulation, hardware & system design tools - TI E2E support forums

TIDM-02013: Academic Inquiry: VT-20163B (WT-20163B) Integrated Magnetics for TIDM-02013

hisen he — Sat, 19 Sep 2026 12:16:06 GMT

Part Number: TIDM-02013

Hello experts

I am a postgraduate student researching the TIDM-02013 6.6kW bidirectional CLLLC OBC reference design.The magnetic component on my test board is marked WT-20163B on the aluminum housing, and it is named VT-20163B in TI documents. This magnetics is co-developed by TI and Cyntec.

For my master’s thesis, I want to verify the internal structure of this integrated transformer. This inquiry is purely for academic research, with no commercial purchasing intention.

Thank you very much for your time and support. Looking forward to your reply.

RE: TIDM-02013: Academic Inquiry: VT-20163B (WT-20163B) Integrated Magnetics for TIDM-02013

Eirwen — Sun, 20 Sep 2026 23:04:24 GMT

Hello, we have received your case and the investigation will take some time. Thank you for your patience.

TIDM-02013: 电流环波形半周期丢失

hisen he — Mon, 07 Sep 2026 10:56:01 GMT

Part Number: TIDM-02013

Dear Experts,

During the Lab 1 experiment, the gate drive performed normally. Afterwards, the Lab 3 current‑loop test was carried out. When only the PH1 branch was enabled with a 200 Ω load connected, the output voltage rose gradually as the current‑loop reference was increased step‑by‑step. Finally, with a current reference of 0.17 and 220 V AC input, the output voltage reached 400 V, and the power factor was higher than 0.99.

However, under identical test conditions when only the PH2 branch was enabled, gate drive signals were missing during the negative half‑cycle. Increasing the current‑loop reference failed to restore the missing drive pulses. In Figure 1, the blue trace shows the gate‑drive waveform of PH2. In Figure 2, the yellow trace denotes the input voltage and the blue trace denotes the input current. Due to this fault in the PH2 branch, the interleaved totem‑pole PFC cannot work properly.

What could be the root cause? Is it an issue with the Hall‑effect current sensor, or a firmware/code‑related problem?

This issue has troubled me for a long time. I look forward to your prompt reply. Thank you very much

RE: TIDM-02013: 电流环波形半周期丢失

Daniel — Tue, 08 Sep 2026 05:30:59 GMT

您好

我想看一下驱动控制信号变化以及反馈相关的变化。

RE: TIDM-02013: 电流环波形半周期丢失

hisen he — Tue, 08 Sep 2026 05:22:27 GMT

Dear Expert,

Our hardware circuit is based on TI reference design TIDM-02013. No modifications have been made to the hardware feedback and control circuits. The software current loop is implemented following the attached diagram. The hardware and software configurations of the PH1 and PH2 power paths are identical except for acceptable minor deviations. PH1 operates normally, while the PH2 path loses gate drive signals for half an AC cycle during operation.

Looking forward to your reply.

RE: TIDM-02013: 电流环波形半周期丢失

hisen he — Tue, 08 Sep 2026 05:09:53 GMT

Dear Expert,

RE: TIDM-02013: 电流环波形半周期丢失

Daniel — Tue, 08 Sep 2026 00:59:35 GMT

您好

方便分享您的实际电路图吗？以及您驱动的控制信号和反馈信号。

RE: TIDM-02013: 电流环波形半周期丢失

Eirwen — Mon, 07 Sep 2026 22:55:55 GMT

已经收到了您的案例，调查需要些时间，感谢您的耐心等待。

RE: LM5060-Q1: LM5060-Q1

Vivian Gao — Wed, 02 Sep 2026 01:26:17 GMT

感谢您关注TI产品。我们正在核实您的问题，请耐心等待我们的回复。

LM5060-Q1: LM5060-Q1

aoyang liu — Wed, 02 Sep 2026 01:01:27 GMT

Part Number: LM5060-Q1

LM5060.pdf

使用TIDA-01168中的LM5060高边驱动芯片，发现在MOS开启后拉低EN引脚输出侧还是有44V电压（MOS正常打开时输出48V），且此时可以放电，一段时间后造成MOS损坏，大概原因是MOS驱动GS在EN脚拉低后还能输出3V左右电压，此电压达到MOS的开启电压VGSTH导致MOS不完全导通。请帮忙给出解决方法。谢谢！

UCC28711: internal lead-frame protrusions

yueliang Ma — Tue, 04 Aug 2026 06:47:30 GMT

Part Number: UCC28711

Hi TI team,

We are currently evaluating the UCC28711DR and during our X-ray inspection, we observed some anomalies that we would like to clarify.

As shown in the attached X-ray images, there appear to be internal lead-frame protrusions on the side of the body of the device. These protrusions extend outward from the main lead-frame structure and are visible on both the top and side views under inspection.

We have highlighted the areas of concern in the images for reference. Could you please help confirm:

Are these protrusions a normal characteristic of the lead-frame design for this device?
Could they potentially impact the mechanical or electrical reliability of the part, such as the risk of short circuits or die attach integrity?
Is there any known process variation that could cause such features, and do they fall within TI's standard acceptance criteria?

Any clarification or guidance would be greatly appreciated.

Thank you