Hi TI team，
附件是我们这边调试的DEMO板的原理图和配置的寄存器，请帮忙评估一下，寄存器的配置是否存在问题，目前我们这边设置1A-1.5A 时芯片发烫比较严重。
/*ChargeOption0*/
Nvdc_Write_register(0x00,0xDE);//充电过流开启 IADP—80X IBAT-16X
Nvdc_Write_register(0x01,0x7B);
/*ChargeOption1*/
Nvdc_Write_register(0x02,0x11);
Nvdc_Write_register(0x03,0x0E);
/*ChargeOption2*/
Nvdc_Write_register(0x10,0x80);
// Nvdc_Write_register(0x11,0x00);
/*ProchotOption0*/
Nvdc_Write_register(0x04,0x74);
Nvdc_Write_register(0x05,0x4B);
/*ProchotOption1*/
Nvdc_Write_register(0x06,0x48);//0x40
Nvdc_Write_register(0x07,0x81);
// /*Charge Current*/
// Nvdc_Write_register(0x0A,0x00);
// Nvdc_Write_register(0x0B,0x00);
/*Max Charge Voltage*/
Nvdc_Write_register(0x0C,0xA0); //16800mV
Nvdc_Write_register(0x0D,0x41);
/*Min System Voltage*/
Nvdc_Write_register(0x0E,0x2F); //12032mV
/*Input Current*/
Nvdc_Write_register(0x0F,0x39); //3.648A
