我司昨天制程出现了一个异常,情况是电池产品在做充放电循环时,3个循环内就出现:内阻高、充不满电、放不满电的不良,不良数有18pcs,初步确定是充电模块的MOS出现了损坏,正常MOS的驱动电压是10V以上,实测是0。
There was an anomaly in the manufacturing process of our company yesterday. During the charging and discharging cycle of battery products, defects occurred within three cycles: high internal resistance, insufficient charge and insufficient discharge, and the number of defects was 18pcs. The preliminary determination was that MOS of the charging module was damaged.
希望得到你们技术分析,1、确认不良MOS内部结构的情况,单体测试性能的情况、2、造成这种损伤的可能原因。希望得到解答
We hope to get your technical analysis: 1. Confirm the internal structure of the bad MOS, the performance of the unit test, 2. Possible reasons for such damage. Hoping for an answer