开关和多路复用器论坛 - 最近的话题

SN74CBTLV3245A-Q1: 测试电路切换开关SN74CBTLV3245A选型可行性

yu zhao — Wed, 05 Aug 2026 11:13:56 GMT

Part Number: SN74CBTLV3245A-Q1

TI团队：

你好，

我们有一种应用场景需要选一款开关或多路复用器，用2片”开关“芯片实现对被测芯片8路并行恒流源、恒压源二选一切换。

这要求“开关”导通时具备双向通流能力，并且“开关”供电3.3V情况下（始终供电不会断电），在“开关“关断时确保不会有恒压源4V到恒流源的漏电流。

因为空间和双向电流限制无法选择继电器或负载开关，我们查找到了SN74CBTLV3245A这款芯片，看datasheet好像符合我们要求。但是资料没有对AB端电压和VCC电压关系的限制进行介绍（比如AB两端电压不能超过VCC+0.5V之类），我只在datasheet中看到VCC工作电压2.3V~3.6V，以及VCC和VI（不确定VI是只指OE电压还是 OE和AB端电压）不能超过4.6V。

我现在想请你们帮忙确认，SN74CBTLV3245A在3.3V供电条件下，OE拉高至3.3V后，B端存在一个4V电源情况下，是否会出现B 到 A、VCC、OE漏电情况或损坏SN74CBTLV3245A的情况。

是否可以推荐可以符合该使用场景的开关芯片或多路复用器

RE: SN74CBTLV3245A-Q1: 测试电路切换开关SN74CBTLV3245A选型可行性

Alice — Thu, 06 Aug 2026 06:53:01 GMT

您好，

SN74CBTLV3245A和SN74CBTLV3245A-Q1的输入输出电压最大3.6V.

如果您想切换4V的信号，请评估链接中的型号。

RE: SN74CBTLV3245A-Q1: 测试电路切换开关SN74CBTLV3245A选型可行性

Taylor — Wed, 05 Aug 2026 23:27:27 GMT

您好，

已经收到了您的案例，调查需要些时间，感谢您的耐心等待。

TMUX646: TMUX646 S参数以及时延

Deemo Gao — Thu, 30 Jul 2026 11:04:37 GMT

Part Number: TMUX646

对于 TMUX646，我只在官网找到了一个后缀为snp的文件，软件无法识别，我也无法从内容上看出来端口数量，平常使用的S参数均为制定端口的s2p，s4p等文件，还请帮忙确认一下是否有方便使用的S参数提供。

另外对于上升时间为20ps的信号，switch的各通道的时延为多少（包含PN），因为现在我们一组需要等长的信号所使用的switch数量不一致，我们希望在layout上考虑到switch的时延。

RE: TMUX646: TMUX646 S参数以及时延

Lydia — Mon, 03 Aug 2026 03:21:13 GMT

您好，

我们只有一个s参数模型，www.ti.com.cn/.../SCDM262

关于如何使用S参数模型，请参考此FAQ:[常见问题]TMUX1574：[常见问题] 什么是S参数模型，我该如何使用它们？- 交换机与复用器论坛- 交换机与复用器 - TI 端对E支持论坛

关于延迟时间，TMUX646的传播延迟变化因 ron 随温度的变化而变化。下面是一个有用的常见问题解答、其中说明了传播延迟如何因 TI 多路复用器而异。

RE: TMUX646: TMUX646 S参数以及时延

Lydia — Thu, 30 Jul 2026 23:33:20 GMT

您好，已经收到了您的案例，调查需要些时间，感谢您的耐心等待。

TMUX9832: 是否可以提供TMUX9832完整pdf资料

Yuan Zhao — Tue, 28 Jul 2026 02:19:15 GMT

Part Number: TMUX9832

请提供TMUX9832完整pdf资料

RE: TMUX9832: 是否可以提供TMUX9832完整pdf资料

Eirwen — Tue, 28 Jul 2026 04:13:30 GMT

您好，请通过下面链接申请完整数据表：

www.ti.com/.../TMUXHV-EVM-GUI

RE: TMUX9832: 是否可以提供TMUX9832完整pdf资料

FRANK1 — Tue, 28 Jul 2026 02:19:41 GMT

感谢您对TI产品的关注！
关于你的咨询，我们正在确认您的问题，感谢您的耐心等待。

RE: TS3A27518E-Q1: 封装是不是Wettable的

Lydia — Fri, 24 Jul 2026 01:03:18 GMT

您好，

TS3A27518ETRTWRQ1封装一共两种，都不是Wettable封装。

https://www.ti.com.cn/product/cn/TS3A27518E-Q1#pps

关于Wettable封装您可以查看此视频了解，

www.ti.com/.../5083767938001

TS3A27518E-Q1: 封装是不是Wettable的

moming — Thu, 23 Jul 2026 12:55:32 GMT

Part Number: TS3A27518E-Q1

TS3A27518ETRTWRQ1

是不是Wettable

RE: TS3A27518E-Q1: 封装是不是Wettable的

Lydia — Thu, 23 Jul 2026 23:16:05 GMT

您好，已经收到了您的案例，调查需要些时间，感谢您的耐心等待。

RE: TS5A22364-Q1: Latch-up current VS On-state switch peak current

Alice — Mon, 01 Jun 2026 06:55:38 GMT

Hello,

Latch-up current should follow the continuous current, not peak current.

The chip should not work beyond the condition listed in " 6.1 Absolute Maximum Ratings" in datasheet.

TS5A22364-Q1: Latch-up current VS On-state switch peak current

Health_Liu — Wed, 27 May 2026 08:53:37 GMT

Part Number: TS5A22364-Q1

Latch-up performance meets 100 mA per AEC Q100-004. On-state switch peak current ±300mA.

May I ask if in the LU test, the IO is capable of conducting a current of 300mA?

And in the LU test, do the other pins carry a current of 100mA?

SN74CBTLV3126: SN74CBTLV3126PWR 和 SN74LVC1G32DCKR 的尺寸问题

xiangchao han — Fri, 29 May 2026 02:20:03 GMT

Part Number: SN74CBTLV3126

SN74CBTLV3126PWR：

PACKAGE SIZE（5.00mm × 4.40mm）中的4.4mm 指的是不带pin 脚的尺寸

SN74LVC1G32DCKR：

BODY SIZE（2.00mm × 2.10 mm）中的2.1mm指的是带pin脚的尺寸

请问下这个是怎么看的？

什么时候是带pin 脚的尺寸？什么时候是不带pin 脚的尺寸？谢谢！

RE: SN74CBTLV3126: SN74CBTLV3126PWR 和 SN74LVC1G32DCKR 的尺寸问题

Eirwen — Fri, 29 May 2026 04:08:02 GMT

不同芯片数据表这个地方不一定完全一致，具体参数请参考数据表最后几页的封装尺寸图（也就是您上传的右边这两个图）。

RE: TMUXHS4412: TMUXHS4412: Internal ESD Diode Interference on ATE Open-Short Test - Risk of False PASS

bin zhang16 — Fri, 29 May 2026 02:59:55 GMT

2. 只有当多路复用器断电时才会出现问题。只要多路复用器通电，就不会有单独的电流通路。

reply,测试open short场景，DUT断电，即使多路复用器通电，机台sink -200uA电流，是否也会受到TMUXHS4412 ESD diode的影响？

3. 交流耦合可能是这里最好的解决方案。

reply,mipi lpbk测试要求DC 耦合，需要高速复用器，设计目的通过复用器切换DB0P/N 到tester测试DC再通过DB0P/N 环回到DUT RX，图片没有画全。

TMUXHS4412: TMUXHS4412: Internal ESD Diode Interference on ATE Open-Short Test - Risk of False PASS

bin zhang16 — Tue, 26 May 2026 02:59:35 GMT

Part Number: TMUXHS4412

We are using TMUXHS4412 in an ATE loopback test for MIPI interfaces. The configuration is: ATE Tester ↔ TMUXHS4412 ↔ DUT.

We have a critical concern regarding the open-short (OS) / continuity test.

Background & Concern:
Our analysis suggests that the TMUXHS4412 has internal ESD diodes on its high-speed differential I/O pins. While these are vital for device protection, we are concerned they will create a parallel current path that directly corrupts our DUT's OS test measurement.

The Core Problem (False PASS Risk):
The OS test works by injecting a small DC test current (e.g., 0.2 mA) to forward-bias the DUT's internal ESD protection diode and measure the resulting voltage drop (e.g., ~0.6 V).

If the DUT's own ESD diode is open-circuited (a fail condition), the current would normally have no path, resulting in a voltage measurement near 0V and a correct FAIL verdict.

However, with the TMUXHS4412 in the path, we fear the ATE current will be shunted through the TMUXHS4412's internal diode. Consequently, the ATE would still measure a normal forward voltage drop, incorrectly reporting the DUT as PASS (a false PASS) even though its ESD diode is faulty.

Request for Clarification:

Could you please confirm the exact ESD protection structure on the high-speed I/O pins (e.g., is there a diode from I/O to GND)?
In a scenario where the DUT's internal diode is open, could the TMUXHS4412's own ESD structure create this misleading current path, leading to a false PASS on the ATE OS test?
Is AC-coupling the only reliable solution to isolate this DC path, and if we apply it, what is the correct biasing scheme for the TMUXHS4412 to ensure it stays within its valid operating conditions (CMV 0V to 1.8V)?

We look forward to your guidance on this critical issue.

RE: SN74CBTLV3126: SN74CBTLV3126PWR 和 SN74LVC1G32DCKR 的尺寸问题

Eirwen — Fri, 29 May 2026 02:24:15 GMT

已经收到了您的案例，调查需要些时间，感谢您的耐心等待。

RE: TMUXHS4412: TMUXHS4412: Internal ESD Diode Interference on ATE Open-Short Test - Risk of False PASS

Katy West — Thu, 28 May 2026 22:21:20 GMT

你好，

1. 是的，I/O 和 GND 之间应该有二极管。
2. 只有当多路复用器断电时才会出现问题。只要多路复用器通电，就不会有单独的电流通路。
3. 交流耦合可能是这里最好的解决方案。是否存在多路复用器两端的电压或电流会超出绝对最大值的情况？或者说，交流耦合只是为了安全起见？

一般来说，我会建议在ATE DUT测试中使用高压多路复用器，例如我们的72xx系列，尤其是在信号为直流的情况下。您选择高速多路复用器而不是普通模拟多路复用器的原因是什么？

最好的，
凯蒂

RE: TMUXHS4412: TMUXHS4412: Internal ESD Diode Interference on ATE Open-Short Test - Risk of False PASS

Katy West — Thu, 28 May 2026 22:12:30 GMT

你好，

最好的，
凯蒂

RE: TS5A22364-Q1: Latch-up current VS On-state switch peak current

Vivian Gao — Wed, 27 May 2026 09:04:32 GMT

Thank you for your attention to TI products. We are verifying your issue, please wait for our reply.

RE: TMUXHS4412: TMUXHS4412: Internal ESD Diode Interference on ATE Open-Short Test - Risk of False PASS

Vivian Gao — Tue, 26 May 2026 03:17:44 GMT

Thank you for your attention to TI products. We are verifying your issue, please wait for our reply.

TXS0102: About TXS0102DCUR Design and Manual Interpretation

xie liyang — Fri, 15 May 2026 10:02:20 GMT

Part Number: TXS0102

hi，everyone， I plan to use TXS0102DCUR to perform level conversion on the I2C signal with a rate of 400K, where VCCA is 1.8V and VCCB is 3.3V. According to the datasheet, the maximum propagation delay could reach 208ns. Considering that the data setup time requirement in the I2C standard is no less than 100ns, I am concerned that using TXS0102DCUR for level conversion might cause the I2C timing to fail to meet the requirements under certain extreme conditions. Could you please help analyze whether the TXS0102DCUR is suitable for the current usage scenario? Thank you.

RE: TXS0102: About TXS0102DCUR Design and Manual Interpretation

Vivian Gao — Mon, 18 May 2026 06:16:51 GMT

The datasheet has Figure 6-5. showing the meaning of time.

The Product Overview below states that this chip supports 400kHz