MSP430F6638主存储器储存数据的问题？

请问您是如何写的？您现在是写在了Bank0吧？

您可以看一下下面的wiki页面，是使用

#pragma LOCATION( x , address );
int x;

或者 DATA_SECTION 来实现的

processors.wiki.ti.com/.../Placing_Variables_in_Specific_Memory_Location_-_MSP430

uchar *ADR = (uchar *)0x38000;//宏定义写入Flash的起始地址，位于bank3
//定义一个结构体
typedef struct
{
uint year;
uint monte;
uint day;
uint hour;
uint minute;
uint tube_num;
uint lock_force;

}Flash_seg;

/*************************** 擦除FLASH ***************************/

void FlashErase(uchar *address)
{
FCTL3 = FWKEY;
while(FCTL3 & BUSY);
FCTL1 = FWKEY + ERASE;
*((uchar *)address) = 0;//将对应地址上的双字节数据擦除

FCTL1 = FWKEY;
FCTL3 = FWKEY + LOCK;
while(FCTL3 & BUSY);
}

/*************************** 按字节写FLASH ***************************/
void FlashWrite(uchar *address,Flash_seg *word,uint count)
{
FCTL3 = FWKEY;
while(FCTL3 & BUSY);
FCTL1 = FWKEY + WRT;
uint temp = 0;
for (uint i = 0;i < count;i++)
{

memcpy(&temp,((uchar *)(word))+i,1);
address[i] = temp;

}

FCTL1 = FWKEY;
FCTL3 = FWKEY + LOCK;
while(FCTL3 & BUSY);
}

int main( void )
{
// Stop watchdog timer to prevent time out reset
WDTCTL = WDTPW + WDTHOLD;
lcd_init();
Flash_seg p;

p.year = 2019;
p.monte = 06;
p.day = 24;
p.hour = 10;
p.minute = 25;
p.tube_num = 01;
p.lock_force = 13;
uint count = sizeof( Flash_seg);

Flash_seg *q = &p;
show_int((*q).year);
LCD_CLEAR();
FlashErase(ADR);
for(uint i = 0;i < 128;i+= 14) //存128个字节的数据
{
FlashWrite(ADR+ i,q,count);
}
}


程序是这样的，定义的首地址是bank3结果写在了bank0，希望您能指点迷津。您给的链接我看明白

很抱歉，目前没有MSP430F6638的板子，所以我用MSP430F5529来测试了一下。

调试结果和程序如下

该程序首先擦除flash seg D，然后使用长字写入模式将32位值写入内存位置0x1800。

 

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//******************************************************************************
//  MSP430F552x Demo - Flash In-System Programming w/ Long-Word write at 0x1800
//
//  Description: This program first erases flash seg D, then it writes a 32-bit
//  value to memory location 0x1800 using long-word write mode. Long-word write
//  provides faster write than byte/word mode.
//  ACLK = REFO = 32kHz, MCLK = SMCLK = default DCO 1048576Hz
//
//                MSP430x552x
//            -----------------
//        /|\|              XIN|-
//         | |                 |
//         --|RST          XOUT|-
//           |                 |
//
//
//   Bhargavi Nisarga
//   Texas Instruments Inc.
//   April 2009
//   Built with CCSv4 and IAR Embedded Workbench Version: 4.21
//******************************************************************************

#include <msp430.h>

int main(void)
{
  unsigned long * Flash_ptrD;               // Initialize Flash pointer Seg D
  unsigned long value;
  WDTCTL = WDTPW+WDTHOLD;                   // Stop WDT

  Flash_ptrD = (unsigned long *) 0x1800;    // Initialize Flash pointer
  value = 0x12345678;                       // Initialize Value
  FCTL3 = FWKEY;                            // Clear Lock bit
  FCTL1 = FWKEY+ERASE;                      // Set Erase bit
  *Flash_ptrD = 0;                          // Dummy write to erase Flash seg
  FCTL1 = FWKEY+BLKWRT;                     // Enable long-word write
  *Flash_ptrD = value;                      // Write to Flash
  FCTL1 = FWKEY;                            // Clear WRT bit
  FCTL3 = FWKEY+LOCK;                       // Set LOCK bit
  while(1);                                 // Loop forever, SET BREAKPOINT HERE
}

 

您能实现往程序存储区出数据吗？

我试了一下，将value(0x12345678)写入MSP430F5529的Main: code memory Bank D

非常感谢您的耐心解答。我看到您写的了 ，我按照您的也重试了一遍，结果我往信息存储区写数据，写进去的区域是我设置的地址，可是我往主存储器中写数据时地址改变了？不是我想要写进去的地址？我用的平台是IAR，会不会是软件平台设置的影响呢？

1.这是往信息存储区写的数据，是正确的

2.这是往主存储区写数据，地址被修改了

3.存储器地址结构

的确是您说的这个问题，非常感谢

问题解决了，是IAR设置不正确导致，感谢您的帮助

好的 谢谢