Part Number: LM5155-Q1 In SEPIC design, the MOS has too much heat problems, mainly due to switching losses. Is there any way to accelerate the MOS turn on speed to reduce switching loss
Thanks for providing the schematics! This clarifies a lot. I've been reviewing them, and I have some additional thoughts and questions.
1. vBus Voltage Instability & Dropping Voltage:
Looking at the schematic, the output capacitor (C188, 10uF…
Other Parts Discussed in Thread: DRV8462 请注意，本文内容源自机器翻译，可能存在语法或其它翻译错误，仅供参考。如需获取准确内容，请参阅链接中的英语原文或自行翻译。 https://e2e.ti.com/support/motor-drivers-group/motor-drivers/f/motor-drivers-forum/1580221/drv8462-is-there-an-estimate-of-switching-losses-versus-i2r…
Other Parts Discussed in Thread: LM5145 请注意，本文内容源自机器翻译，可能存在语法或其它翻译错误，仅供参考。如需获取准确内容，请参阅链接中的英语原文或自行翻译。 https://e2e.ti.com/support/power-management-group/power-management/f/power-management-forum/1244952/lm5145design-calc-mosfet-loss-estimation 器件型号： LM5145DESIGN…
请注意，本文内容源自机器翻译，可能存在语法或其它翻译错误，仅供参考。如需获取准确内容，请参阅链接中的英语原文或自行翻译。 尊敬的 Fusheng：
感谢您的更新。 从原理图中可以看出、有两个并联的电源块、即 PQ17和 PQ18、这应该没问题、但我会推荐以下链接中的应用手册、以了解有关并联 FET 的指南。 每个 FET 应具有自己的栅极电阻器、用于电流共享并防止两个并联 FET 之间出现栅极振荡。 该设计采用单个高侧和单个低侧栅极电阻器。 最好为每个 FET 将它们分别拆分为单独的电阻器。 开关节点波形上存在电压尖峰…
Hi,
The Formula is correct, its evaluation for the values used is a little off.
Kindly use the excel tool LM5163-LM5164DESIGN-CALC Calculation tool | TI.com to calculate Cout_min.
Higher capacitor value is chosen to have a good margin even after the DC bias…
Hi,
I followed your instructions: replaced the USB cable, added capacitor C7:A, and connected USB_GND to GND through the wire. I tried these three methods, but all failed in the end.
After the auxiliary power （12V 2A）was connected, JTAG was immediately…
