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  • RE: DRV8305-Q1EVM: MOTOR-DRIVE-FOC-FET-LOSS-CALC_Rev1.01文档中公式推导

    FOC FET loss equations.pdf 这些没有给出推导过程

  • RE: LM5146: MOS管驱动信号存在振铃

    SYNCIN在此处处于断路状态，因此在内部下拉，这意味着二极管仿真模式已启用。 这将给出您为轻负载操作测量的波形，其中LO在电感器电流接近零时关闭(振铃是两个FET均关闭时与开关节点电容共振的电感器)。 将SYNCIN与VCC绑定以使用固定FSW在FPWM中设置控制器。 顺便说一句,ILIM的上限太高了。 请使用快速启动计算器帮助选择组件。 https://www.ti.com/tool/LM5146DESIGN-CALC
    • Answered

  • BQ4050: lifetime中最大电流和最大平均电流已超过OCD1设置的电流阈值，但未出发OCD1

    Resolved
    Part Number: BQ4050 3#.gg.xlsx 设置OCD1电流为-1450mA，litetime中记录到Max Discharge Current为-1805mA Max Avg Dsg Current为-1804mA 但是未记录到有触发OCD1事件，麻烦请问下这是什么原因！附件为导出的GG文件！
    • Resolved

  • TPS43060: Output voltage ripple is too high at 20Vout, 7.5A Iout

    TI Thinks Resolved
    Part Number: TPS43060 Hi Sir, I am currently using the TPS43060EVM-199 to simulate a design with the following parameters: Input: 12V @ 12A Output: 20V @ 7.12A I have modified the components on the EVM based on the recommended values from the simulation…

  • RE: BQ25756: 充电异常

    您好，请参考下面schematic checklist确认电路。 4617.BQ25756_Schematic_And_Layout_Checklist.pdf TRANSLATE with x English Arabic Hebrew Polish Bulgarian Hindi Portuguese Catalan Hmong Daw Romanian Chinese Simplified Hungarian Russian Chinese Tradit…

  • RE: LM3409-Q1: 以TI的公板为基础修改LM3409-Q1的驱动参数

    I can't say there is anything I know of that is "widely" used. This is not a common use case in automotive LED lighting. If you have the LDP5531EVM then I would probably modify it to see if you can achieve the desired output power. When…

  • RE: BQ40Z50-R2: BQ40z50-R2 测试短路出现烧IC CHG引脚和放电MOS管GS电压被抬高。

    5428.GG.csv 4861.pdf

  • BQ40Z50-R2: Learning Cycle Issue

    TI Thinks Resolved
    Part Number: BQ40Z50-R2 Other Parts Discussed in Thread: GPCCHEM , BQ40Z50 Hi TI Team, When we used the BQ40Z50-R2 gas gauge to do the Learning cycle test, we encountered a issue. The Learning cycle had been successful, but the obtained battery capacity…
    • Answered

  • RE: [参考译文] LOAD-SWITCH-FET-LOSS-CALC：负载开关

    Resolved
    请注意，本文内容源自机器翻译，可能存在语法或其它翻译错误，仅供参考。如需获取准确内容，请参阅链接中的英语原文或自行翻译。 尊敬的 Mykhaylo： FemtoFET 是具有可焊接 LGA (基板栅格阵列)焊盘的小型芯片级 FET。 推荐的两种 FET 都具有-20V BVDSS、并将使用12V 输入。 这些 LGA 器件的最大功率耗散约为0.5W。 由于导通电阻较低、CSD25483F4和 CSD25480F3在1.2A 电流下的导通损耗估计分别为335mW 和214mW。 这在软件包的功能范围内…

  • RE: LM5122: LM5122

    您好 https://www.ti.com.cn/tool/cn/download/LM5122-BOOST-CALC 请您参考这个官方的计算工具。

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