Other Parts Discussed in Thread: CSD18540Q5B 驱动器要求:24V供电,最大电流在60A。
初选TI的NexFET:CSD18540Q5B(60V,1.8毫欧姆)现对手册中有些参数不太了解,不知道该器件是否能满足使用要求。
1.这里Id有三个参数:封装限制:100A;25度硅材料限制:221A;第三个参数28A是什么概念?选型时是按照三个参数最小值选型??
2.1.8毫欧是在25度下的,实际使用中电流比较大,温度也比较高,这样通态电阻肯定要变大,功耗大,发热也会更严重…
Another question is: For a dual-transistor cascaded flyback topology like the one designed in PMP41009, if the switching MOSFETs are replaced with SiC MOSFETs, is it necessary to add a gate resistor between the gate and source of Q2? And if added, will…
Another question is: For a dual-transistor cascaded flyback topology like the one designed in PMP41009, if the switching MOSFETs are replaced with SiC MOSFETs, is it necessary to add a gate resistor between the gate and source of Q2? And if added, will…
Other Parts Discussed in Thread: UCC5350 请注意,本文内容源自机器翻译,可能存在语法或其它翻译错误,仅供参考。如需获取准确内容,请参阅链接中的英语原文或自行翻译。 https://e2e.ti.com/support/power-management-group/power-management/f/power-management-forum/1601913/ucc5350-design-questions-of-sic-fet-in-parallel 部件号…
Other Parts Discussed in Thread: UCC21520 , UCC256402 请注意,本文内容源自机器翻译,可能存在语法或其它翻译错误,仅供参考。如需获取准确内容,请参阅链接中的英语原文或自行翻译。 https://e2e.ti.com/support/power-management-group/power-management/f/power-management-forum/1588569/ucc256402-using-an-external-sic-gate-driver…
Part Number: DRV8301
I plan to drive SiC MOSFETs with a DRV8301. Can I add a negative-voltage hold capacitor and a negative-voltage clamp (zener) diode after the DRV8301 to form a negative-voltage shutdown circuit? What precautions or considerations…