If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.
If you are talking about driving parallel FETs, what matters is the gate charge (and therefore input capacitance) rather than the number of FETs necessarily. For example, a FET with 20nC gate charge is roughly equivalent to two 10nC FETs in parallel.
In the datasheet, the relevant parameters are the rise and fall time parameters. In this case, the typical rise time for a 4.7nF load is 200us and the fall is 40us. You can compare that to your FET's input capacitance (CISS) to estimate the rise/fall time of your FET.
So the main motivator will need to be the rise and fall times you need for the FETs. It could theoretically drive as many FETs as you want, but if the rise and fall time is >1 second that likely wouldn't work for you.
