Other Parts Discussed in Thread: BQ78350, BQ76200,
使用BQ76930+BQ78350做7串的方案（MOS高侧控制，使用BQ76200驱动）,目8816.Schematic Prints.pdf前前端电压无法采集，后端无法通讯；PEGOUT输出电压0.6V;
使用BQ76930+BQ78350做7串的方案（MOS高侧控制，使用BQ76200驱动）,目8816.Schematic Prints.pdf前前端电压无法采集，后端无法通讯；PEGOUT输出电压0.6V;
您好，In the external P-Channel FET balancing circuitry, the diodes are connected wrongly. The anode should connect to the gate of the FET and not after the gate resistor.
Typically N-Channel FETs are used for external cell balancing as these are more robust for random cell connection. More details are explained in Section 10 Random Cell Connection – Within Limits of the bq769x0 Family Top 10 Design Considerations.
I suggest they look at TIDA-01093 reference design for P-channel external balancing connections.
TIDA-00792 reference design exhibits the BQ76200 high side driver and this design is the closest to the customer's design. Did they look at this design before?
I suggest you first detailly look at these designs.