[参考译文] TMS570LS3137：bank0的 FO21、Fapi_Erase 扇区失败

https://e2e.ti.com/support/microcontrollers/arm-based-microcontrollers-group/arm-based-microcontrollers/f/arm-based-microcontrollers-forum/1065591/tms570ls3137-fo21-fapi_erase-sector-of-bank0-failed

您好！  

我们正在使用 TMS570LS3137开发引导加载程序、并在引导加载程序中发现：

Fapi_issue19 CommandWithAddress (Fapi_EraseSector、FLASH_SECTORnum]。 启动)；

此函数可以擦除 bank1扇区、但无法擦除 bank0中的扇区、例如、在 bank0中擦除 sector10时、系统会在擦除该扇区时出错。

擦除功能如下：

const SECTORS flash_sector[NUMBEROFSECTORS]=
{
  (void *)0x00000000, 0x08000, 0,  0, 0xfff87000,
  (void *)0x00008000, 0x08000, 0,  1, 0xfff87000,
  (void *)0x00010000, 0x08000, 0,  2, 0xfff87000,
  (void *)0x00018000, 0x08000, 0,  3, 0xfff87000,
  (void *)0x00020000, 0x20000, 0,  4, 0xfff87000,
  (void *)0x00040000, 0x20000, 0,  5, 0xfff87000,
  (void *)0x00060000, 0x20000, 0,  6, 0xfff87000,
  (void *)0x00080000, 0x20000, 0,  7, 0xfff87000,
  (void *)0x000A0000, 0x20000, 0,  8, 0xfff87000,
  (void *)0x000C0000, 0x20000, 0,  9, 0xfff87000,
  (void *)0x000E0000, 0x20000, 0, 10, 0xfff87000,
  (void *)0x00100000, 0x20000, 0, 11, 0xfff87000,
  (void *)0x00120000, 0x20000, 0, 12, 0xfff87000,
  (void *)0x00140000, 0x20000, 0, 13, 0xfff87000,
  (void *)0x00160000, 0x20000, 0, 14, 0xfff87000,
  (void *)0x00180000, 0x20000, 1,  0, 0xfff87000,
  (void *)0x001A0000, 0x20000, 1,  1, 0xfff87000,
  (void *)0x001C0000, 0x20000, 1,  2, 0xfff87000,
  (void *)0x001E0000, 0x20000, 1,  3, 0xfff87000,
  (void *)0x00200000, 0x20000, 1,  4, 0xfff87000,
  (void *)0x00220000, 0x20000, 1,  5, 0xfff87000,
  (void *)0x00240000, 0x20000, 1,  6, 0xfff87000,
  (void *)0x00260000, 0x20000, 1,  7, 0xfff87000,
  (void *)0x00280000, 0x20000, 1,  8, 0xfff87000,
  (void *)0x002A0000, 0x20000, 1,  9, 0xfff87000,
  (void *)0x002C0000, 0x20000, 1, 10, 0xfff87000,
  (void *)0x002E0000, 0x20000, 1, 11, 0xfff87000

};


uint8_t drvFapi_BlockEraseSector(uint8_t sectornum)
{
    uint8_t RetValue=0;

    Fapi_initializeFlashBanks((uint32_t)SYS_CLK_FREQ); /* used for API Rev2.01 */

    Fapi_setActiveFlashBank((Fapi_FlashBankType)(flash_sector[sectornum].bankNumber));
    Fapi_enableMainBankSectors(0xFFFF);                 /* used for API 2.01*/
    while( FAPI_CHECK_FSM_READY_BUSY != Fapi_Status_FsmReady );

    Fapi_issueAsyncCommandWithAddress(Fapi_EraseSector, flash_sector[sectornum].start);
    while( FAPI_CHECK_FSM_READY_BUSY == Fapi_Status_FsmBusy );
    while(FAPI_GET_FSM_STATUS != Fapi_Status_Success);

    if(Flash_Erase_Check((uint32_t)flash_sector[sectornum].start, flash_sector[sectornum].length))
    {
        RetValue |= 0x82;/*flash中的值不为0xFFFFFFFF,擦除失败*/
    }
    else
    {
        ;
    }

    return RetValue;
}

2.链接配置如下：

存储器
｛
    向量         (X)          ： origin=0x00000000 length=0x00000100
    Flash_API   (RX)          ： origin=0x00010000 length=0x00010000
    FLASH0                 (RX)         ： origin=0x00020000 length=0x00040000

    堆栈          (RW)         ： origin=0x08000000 length=0x00009000
    RAM_F201API (RW)         ： origin=0x08009000 length=0x00003000
    RAM             (RW)         ： origin=0x0800C000 length=0x00033F00
  USERLEGLE        (RW)         ： origin=0x0803FF00 length=0x00000100        //get_COREREG_M ü ADDR用户自定义使用的内存段
｝

 部分
｛
    .intvecs ： {}>  向量

   闪存 API ：
   ｛
     fapi_UserDefinedFunctions.obj (.text)
     bl_flash.obj (.text)
     --library= .\lib\f021_API_CortexR4_be.lib (.text)
   ｝ load = flash_API、 run = RAM_F201API、 load_start (api_load)、 run_start (api_run)、 size (api_size)

    .text    ： {} > FLASH0
    .const   ： {}>FLASH0   
    .cinit   ： {} > FLASH0
    .pinit   ： {} > FLASH0
    .bss     ： {} > RAM
    .data    : {}>  RAM
  .sysmem  ： {}>RAM   
｝

3.函数_copyAPI2RAM_()也在 void _c_int00 (void)。中调用

 4.擦除 bank0扇区时，将显示以下错误消息