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https://e2e.ti.com/support/microcontrollers/arm-based-microcontrollers-group/arm-based-microcontrollers/f/arm-based-microcontrollers-forum/906842/tm4c1231h6pm-internal-flash-memory-reaching-100k-cycles
您好！
如果我一直将内部闪存存储器的一个特定区域的性能强调为超过100k 个周期、它会影响存储器的其他区域或仅影响受应力区域的性能吗？
谢谢、
Jacky
只有受到压力的区域才会受到影响。
