[参考译文] MSP430I2040：如何将大量数据写入闪存？

https://e2e.ti.com/support/microcontrollers/msp-low-power-microcontrollers-group/msp430/f/msp-low-power-microcontroller-forum/1184824/msp430i2040-how-to-write-large-chunk-of-data-into-flash

您好！

我正在尝试将大量数据(某些用户生成的设置的结构)保存到闪存中以保留这些数据。 大小(如果为112B)。  由于某种方式、有时在回读整个闪存时实际只保存前3个~ 10个字节、由于在写入之前擦除整个闪存段、其余字节将为0xFF。

uint8_t tlv[64];
    uint8_t *Flash_ptr;
    // Read TLV calibration data before erasing information memory
	memcpy((void *)&tlv[0], (void*)TLV_START, sizeof(tlv));
    // Save settings struct into flash or other persistent medium
    Flash_ptr = (uint8_t *)SETTINGS_ADDR;
    // Erase information memory
    WDTCTL = WDTPW | WDTHOLD;
    FCTL2 = FWKEY | FSSEL_1 | FN1 | FN3 | FN5;  // MCLK/42 for Flash Timing Generator
    while (FCTL3 & BUSY);                       // Make sure flash controller is not busy
    FCTL3 = FWKEY;                              // Clear Lock bit
    if(FCTL3 & LOCKSEG) {                       // If Info Seg is still locked
        FCTL3 = FWKEY | LOCKSEG;                // Clear LOCKSEG bit
    }
    FCTL1 = FWKEY | ERASE;                      // Set Erase bit
    *Flash_ptr = 0;                             // Dummy write to erase info segment
    while (FCTL3 & BUSY);                       // Make sure flash controller is not busy
    FCTL3 = FWKEY;
    if(FCTL3 & LOCKSEG) {                       // If Info Seg is still locked
        FCTL3 = FWKEY | LOCKSEG;                // Clear LOCKSEG bit
    }
    FCTL1 = FWKEY | WRT;
    memcpy((void *)SETTINGS_ADDR, &settings, sizeof(Settings));
    // Save TLV calibration data back into flash
    memcpy((void *)TLV_START, &tlv[0], sizeof(tlv));
    FCTL1 = FWKEY;                              // Clear WRT bit
    FCTL3 = FWKEY | LOCKSEG;                    // Set LOCK bit

起初、我以为这只发生在信息闪存上、但后来我发现、当 SETTINGS_ADDR 指向0xF800等主闪存时、也会发生这种情况。 数据表提到累计编程时间不应超过8ms。 但我的计算表明、112B 花费的时间少于3ms。 MCLK/42作为时钟。

有人能告诉我在这里缺少什么吗？

谢谢。