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尊敬的 TI 专家：
是用于复位 DDR 电源 (DDR_Reset func)？的步骤
我正在努力解决 SBL 上不同 DDR 的兼容性问题。 使用不同的 DDR 配置编译不同的 SPL 时、执行 memtester 是正常的；通过 SBL 中的 MR 寄存器成功识别不同的 DDR 后、我发现 memtester 会失败。
我还提供了 DDR 兼容性的修改、还请帮助检查它们。
static int32_t ddr_Reset(void)
{
Bootloader_profileAddProfilePoint("Resetting DDRSS 0721——2...\n");
*(volatile unsigned int*)(0x400B20) = (*(volatile unsigned int*)(0x400B20) & 0xFFFFFF00) | 0x1;
*(volatile unsigned int*)(0x400120) = 0x1;
while(*(volatile unsigned int*)(0x400128) != 0);
*(volatile unsigned int*)(0x400B24) = (*(volatile unsigned int*)(0x400B24) & 0xFFFFFF00) | 0x1;
*(volatile unsigned int*)(0x400120) = 0x1;
while(*(volatile unsigned int*)(0x400128) != 0);
*(volatile unsigned int*)(0x400B28) = (*(volatile unsigned int*)(0x400B28) & 0xFFFFFF00) | 0x1;
*(volatile unsigned int*)(0x400120) = 0x1;
while(*(volatile unsigned int*)(0x400128) != 0);
*(volatile unsigned int*)(0x400B20) = (*(volatile unsigned int*)(0x400B20) & 0xFFFFFF00) | 0x3;
*(volatile unsigned int*)(0x400120) = 0x1;
while(*(volatile unsigned int*)(0x400128) != 0);
*(volatile unsigned int*)(0x400B24) = (*(volatile unsigned int*)(0x400B24) & 0xFFFFFF00) | 0x3;
*(volatile unsigned int*)(0x400120) = 0x1;
while(*(volatile unsigned int*)(0x400128) != 0);
*(volatile unsigned int*)(0x400B28) = (*(volatile unsigned int*)(0x400B28) & 0xFFFFFF00) | 0x3;
*(volatile unsigned int*)(0x400120) = 0x1;
while(*(volatile unsigned int*)(0x400128) != 0);
return SystemP_SUCCESS;
}
e2e.ti.com/.../0001_2D00_DDR_2D00_2G_2D00_2G_2D00_DDR_2D00_20250704.txt
