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28030使用外部晶振启动出现问题

Other Parts Discussed in Thread: CONTROLSUITE

把程序烧写到RAM,这时使用外部晶振,单步调试进入函数XtalOscSel(),可以顺利执行 DELAY_US(1000L)。把程序烧写到FLASH中,这时使用外部晶振,单步调试进入函数XtalOscSel(),当执行到DELAY_US(1000L)时,程序一直停在该处。请问大神知道这时什么原因吗?会是硬件上的问题吗?