各位大神!我在调试TMS570LC4357内部flash时,发现flash的bank0和bank1一上电内部就随机分布一些数据,这些有数据的地址无法正常擦除和写入数据,我目前想操作bank1,但上电有数的地方我无法操作,请问这个问题怎么解决?
麻烦各位大神指点!
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各位大神!我在调试TMS570LC4357内部flash时,发现flash的bank0和bank1一上电内部就随机分布一些数据,这些有数据的地址无法正常擦除和写入数据,我目前想操作bank1,但上电有数的地方我无法操作,请问这个问题怎么解决?
麻烦各位大神指点!
/* Purpose : main function for flash wrapper testing
*/
#include <stdio.h>
#include <stdlib.h>
#include "Constants.h"
#include "Helpers.h"
#include "Registers.h"
#include "Types.h"
#include "F021.h"
/* added to verify the erase and program operation on EEPROM memory */
void Fapi_BlockProgram( unsigned int Bank, unsigned int Flash_Start_Address, unsigned int Data_Start_Address, unsigned int Size_In_Bytes, unsigned int Freq_In_MHz);
void Fapi_SectorErase( unsigned int Bank, unsigned int Flash_Start_Address, unsigned int Freq_In_MHz);
void Fapi_BlockProgram( unsigned int Bank, unsigned int Flash_Start_Address, unsigned int Data_Start_Address, unsigned int Size_In_Bytes, unsigned int Freq_In_MHz)
{
register unsigned int src = Data_Start_Address;
register unsigned int dst = Flash_Start_Address;
register unsigned int bytes_remain = Size_In_Bytes;
Fapi_initializeAPI((Fapi_FmcRegistersType *)0xfff87000,Freq_In_MHz);
Fapi_setActiveFlashBank(Bank);
while( bytes_remain > 0)
{
Fapi_issueProgrammingCommand((unsigned int *)dst,
(unsigned char *)src,
(unsigned long) 16,
0,
0,
Fapi_AutoEccGeneration);
while( Fapi_checkFsmForReady() == Fapi_Status_FsmBusy );
src += 0x10;
dst += 0x10;
bytes_remain -= 0x10;
}
}
void Fapi_SectorErase( unsigned int Bank, unsigned int Sector_Start_Address, unsigned int Freq_In_MHz);
{
Fapi_initializeAPI((Fapi_FmcRegistersType *)0xfff87000,Freq_In_MHz);
Fapi_setActiveFlashBank(Bank);
Fapi_issueAsyncCommandWithAddress(Fapi_EraseSector, (uint32 *)Sector_Start_Address);
while( Fapi_checkFsmForReady() == Fapi_Status_FsmBusy );
}
你好,你开发板芯片型号是TMS570LS43X系列,我用的芯片是TMS570LC43X系列的,这有区别吗?