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关于TMS570LS3137的EMIF连接异步RAM问题

Other Parts Discussed in Thread: HALCOGEN, TMS570LS3137

各位亲爱的TI 工程师,我们在使用TMS570LS3137使用了16位读写方式,连接一异步RAM芯片(MR4A16B),EMIF_BA[1]连接至A0位,硬件电路连接依照TRM的Figure 17-8 b)框图设计。HALCOGEN中配置90MHz,16位,非页读写方式,各个cycle依照默认值,CS选择2。调试时,发现

Q:向 0x60000000地址位写入数据01 02时(C语言1条写语句,对应汇编3条语句), 地址0x60000000~0x6000000F 值变成01 02 01 02 01 02 01 02 01 02 01 02 01 02 01 02;同时 0x60000100~0x6000010F, 0x60000200~0x6000020F, 0x60000300~0x6000030F, 0x60000400~0x6000040F, 0x60000500~0x6000050F, 0x60000600~0x6000060F, 0x60000700~0x6000070F这几位地址所在也与上方相同。

针对上述调试现象,请问有下一步建议修改或者整改思路可供参考一下吗?