您好,正在用ti的MSP-EXP430FR2311。需要实现程序中某些参数的掉电存储。在driverlib users guide和产品users guide 都没找到相关的内容。不知道是否有对flash进行读写操作的例程或者操作说明。在drivelib example也没找到相关例程。
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您好,正在用ti的MSP-EXP430FR2311。需要实现程序中某些参数的掉电存储。在driverlib users guide和产品users guide 都没找到相关的内容。不知道是否有对flash进行读写操作的例程或者操作说明。在drivelib example也没找到相关例程。
例程里是FR2433,用的0x1800存储地址。
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//******************************************************************************
// MSP430FR243x Demo - Long word writes to FRAM
//
// Description: Use long word write to write to 512 byte blocks of FRAM.
// Toggle LED after every 100 writes.
// NOTE: Running this example for extended periods will impact the FRAM
// endurance.
// ACLK = REFO, MCLK = SMCLK = default DCODIV = ~1MHz
//
// It is recommended to disable interrupt while code is writing to main FRAM,
// because it is dangerous for running the interrupt services routine with
// PFWP disabled.
// This code examples is using DFWP which wouldn't have dangerous. But it is
// recommended to disable interrupt if user is using PFWP.
//
// MSP430FR2433
// ---------------
// /|\| |
// | | |
// --|RST |
// | |
// | P1.0 |---> LED
//
// Ling Zhu
// Texas Instruments Inc.
// Feb 2015
// Built with IAR Embedded Workbench v6.20 & Code Composer Studio v6.0.1
//******************************************************************************
#include <msp430.h>
void FRAMWrite(void);
unsigned char count = 0;
unsigned long *FRAM_write_ptr;
unsigned long data;
#define FRAM_TEST_START 0x1800
int main(void)
{
WDTCTL = WDTPW | WDTHOLD; // Stop watchdog timer
P1OUT &= ~BIT0; // Clear P1.0 output latch for a defined power-on state
P1DIR |= BIT0; // Set P1.0 to output directionOUT
PM5CTL0 &= ~LOCKLPM5; // Disable the GPIO power-on default high-impedance mode
// to activate previously configured port settings
data = 0x11111111; // Initialize dummy data
while(1)
{
data += 0x00010001;
FRAM_write_ptr = (unsigned long *)FRAM_TEST_START;
FRAMWrite();
count++;
if (count > 100)
{
P1OUT ^= 0x01; // Toggle LED to show 512 bytes
count = 0; // have been written
data = 0x11111111;
}
}
}
void FRAMWrite (void)
{
unsigned int i=0;
SYSCFG0 = FRWPPW | PFWP;
for (i = 0; i < 128; i++)
{
*FRAM_write_ptr++ = data;
}
SYSCFG0 = FRWPPW | PFWP | DFWP;
}
写
FRAMWrite_Char((uint8_t *)0x1800, 0xAA);
读
uint8 temp;
temp = *((uint8_t *)0x1800);
写函数 每个芯片可能有所差异,以下为范例
void FRAMWrite_Char(uint8_t *FRAM_write_ptr, uint8_t data)
{
SYSCFG0 = FRWPPW | PFWP;
*FRAM_write_ptr = data;
SYSCFG0 = FRWPPW | PFWP | DFWP;
}
Outman J 说:您好,只能换了个430的样片。那FRAM区域里F100h到FFFFh是代码存储区域,其中FF80h到FFFFh是存储中断向量和标志位的地方,这样的么?
所以不对那部分区域进行操作就不会有问题了对吧? 另外在F100h到FFFFh是代码存储区域,烧写的代码是从高位到低位填还是低位到高位填应该怎么获知?
这样才好确定掉电存储的参数是从F100h开始写入还是从FFFFh开始写入,以避免对代码段存储空间的错误操作。不知这样的理解对否。
感谢您的解答!
理解正确。烧写的代码是从高位到低位填还是低位到高位填应该怎么获知?可以在debug的时候,看一下memory地址。