基于GaN功率mos设计30v转5v@10A有源正激钳位变换器,工作于500kHz。我有两个问题感觉自己解决不了1、高边驱动(GaN好像现在只有n型的所以不得不用高边的)该怎么做,有没有不是基于变压器隔离的方案?2、mos驱动电压(Vgs要求比硅mos低,5-6V),直接用硅mos的控制芯片是不是就直接烧管子?该怎么驱动?
谢谢
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