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我想请教一下.我看到TI的典型应用电路中,吸收回路是并联在MOS管漏极和地之间的,而另一个资料介绍flyback吸收回路时,明确提出,吸收回路要放在MOS管漏极和源极之间。请问，RCD到底该放在哪个位置呢~
我一般是直接放在漏极跟地之间，漏源之间，吸收瞬间的尖峰电流会被取样电阻拾取，应该不好吧。
