hi,你好!
我在验证产品的过流保护功能时发现其恢复时,充电MOS会打嗝一次,还请帮忙确认一下原因。测试内容如下:
1、按附件GG文件配置AFE
2、打开充放电MOS
3、使用DC电源给电池包充电,使其触发过流保护OCC
4、使用电子负载0.5A放电解除过流保护OCC
5、使用示波器监控充电MOS驱动波形,如附件2
6、将sleep_EN关闭,重复2~5步骤,测试的波形如附件3
造成此差异的原因还请帮忙确认和分析下?


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hi,你好!
我在验证产品的过流保护功能时发现其恢复时,充电MOS会打嗝一次,还请帮忙确认一下原因。测试内容如下:
1、按附件GG文件配置AFE
2、打开充放电MOS
3、使用DC电源给电池包充电,使其触发过流保护OCC
4、使用电子负载0.5A放电解除过流保护OCC
5、使用示波器监控充电MOS驱动波形,如附件2
6、将sleep_EN关闭,重复2~5步骤,测试的波形如附件3
造成此差异的原因还请帮忙确认和分析下?


您好,请参考下面内容:
After a closer look this does appear to be behaving reasonably. The 'burp' you are seeing may be caused by the body diode protection triggering you can read more on this in section 5.2.3.1 FET Configuration. When coming out of SLEEP mode where the FET turn on timing takes up to 1s in this mode and up to 250ms in Normal mode.
Disabling SLEEP_EN may have cleared the issue being seen as it has the shorter turn on time.
To better understand the timing please refer to Table 6-9 in the TRM for NORMAL and SLEEP modes times for FET turn on.