BQ76952 是如何实现高侧NMOS的控制,内部电路是怎样的?
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您好,请参考采用高侧 N-MOSFET 的堆叠式 BQ769x2 设计注意事项,内部电路只有数据手册8.2 Functional Block Diagram
您好,The BQ76952 uses the charge pump to drive the CHG and DSG FETs. The charge pump will use an overdrive voltage which can be set to 11V or 5.5V. By default this is set to 11V.
Basically the Vgs voltage is either 5.5V or 11V. This is also explained in Section 5.2.2 High-Side NFET Drivers of the Technical Reference Manual
Note: Whenever the charge pump is in operation (in 5.5 V or 11 V mode), the maximum voltage on VBAT should be reduced to ensure the voltage on CP1, CHG, and DSG does not exceed their maximum specified voltage.