16串电池包总压53.4V、软件配置短板保护电流为40A,120us、5000W 1欧电阻、空开
测试1:在输出正负极间串一个5000W 1欧电阻和空开,闭合空开,触发短路保护,正常保护MOS未损坏。测到放电MOS栅极G和源极S波形见下图。绿色为G波形、红色为S波形,放大波形观察G点电压在掉至总压时以与S重合,即MOS完全关断
测试2:测试1完成后去除输出端串接的5000W 1欧电阻,直接通过空开短路,,显示触发短路保护,但MOS管损坏。
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16串电池包总压53.4V、软件配置短板保护电流为40A,120us、5000W 1欧电阻、空开
测试1:在输出正负极间串一个5000W 1欧电阻和空开,闭合空开,触发短路保护,正常保护MOS未损坏。测到放电MOS栅极G和源极S波形见下图。绿色为G波形、红色为S波形,放大波形观察G点电压在掉至总压时以与S重合,即MOS完全关断
测试2:测试1完成后去除输出端串接的5000W 1欧电阻,直接通过空开短路,,显示触发短路保护,但MOS管损坏。
您好,请参考下面内容
They might want to look at the ratings of the FETs to see if they can handle the amount of current when they short the part.
Please attach the entire schematic. I would like to see their connections at the SRN and SRP pins. If these pins are not filtered, it can cause high spikes.
您好,电路看起来没有问题,推荐参考 FAQ 中提到的第四点,应该能帮您解决问题。