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BQ34Z100-G1: BQ34Z100-G1学习完成后对Data memory的访问是否有限制？

bgb vrgrb
Prodigy 30 points
Part Number: BQ34Z100-G1
Other Parts Discussed in Thread: BQ34Z100, BQSTUDIO

TI的工程师们，你们好：

我在使用BQ34Z100对电池的循环学习完成后，将它的df.fs文件下载到另外一块BQ34Z100上面；但我无法修改Data Memory中的Number of series cell这个参数，BatteryManagementStudio上的故障显示为“a read of data written failed comparison”，请问这是正常的吗?

当学习完成后，BQ34Z100是否锁定了对Data Memory 的访问？

是否有办法能够解除这个限制呢？

期待你们的回复，谢谢！

  • +1
    TI__Guru*** 130456 points

    您好

    The gauge defaults to 1 series cell configuration - so you would have to program the SREC or change the value of num series cells manually before the gauge would get to this state that cannot update flash. Before programming with the high number of series cells you should make sure that the configuration is correct, or set the Flash Update OK Cell Volt to 0mV during testing and only change it to the value desired (if any) during production.

    You can get out of this state by using another gauge or EVM and configuring the Flash Update OK Cell Volt to 0mV and export the SREC, then flash it to this gauge, the one you can't upload anything to (in FW mode).

    1. power off and power on the device will send it back to the sealed mode. this is by design.

    2. Data flash cannot be written until the voltage is greater than flash update voltage. Increase the voltage so that bqStudio shows a voltage greater than flash update OK voltage (get voltage to 3000mV range)

  • 0 回复 Star Xu
    Prodigy 30 points

    感谢您的回复，我尝试了您的方法，已经可以正常写入了，非常感谢！