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芯片Vref、regn电压均正常，充电电压也能出来，就是带负载MOS管会异常发烫。求解采用的AGM403A1 Nmos。
场效应管(MOSFET) 类型 1个N沟道 漏源电压(Vdss) 40V 连续漏极电流(Id) 120A 功率(Pd) 105W 导通电阻(RDS(on)@Vgs,Id) 2.7mΩ@10V,20A 阈值电压(Vgs(th)@Id) 2.1V@250uA 栅极电荷(Qg@Vgs) 20nC@10V 工作温度 -55℃~+150℃@(Tj)
