BQ27441-G1: 匹配化学id失败

? ?

Part Number: BQ27441-G1
Other Parts Discussed in Thread: GPCCHEM, BQSTUDIO,

通过检测电池充放电数据，匹配化学id,没有结果，MiscInfo.txt 信息为”ProcessingType= 2“，请问如何获取到化学id。

以及id获取到后，芯片中Ra配置的值与电池有什么关系？如何获取？

6204.config.txt

ProcessingType = 2
NumCellSeries = 1
ElapsedTimeColumn = 0
VoltageColumn = 1
CurrentColumn = 2
TemperatureColumn = 3

4555.roomtemp_rel_dis_rel.csv

4555.GPC_report.txt

MiscInfo.txt

ProcessingType= 2

9 天前

0 Vivian Gao 8 天前

TI__Expert 4260 points

您好

您可以通过GPCCHEM工具匹配化学ID，方法在下方链接26页2.2.3 电池化学 ID 匹配方法。

您说的Ra应该指的是阻抗，重点看一下下方链接34页的Ra Flag章节

www.ti.com.cn/.../zhcaaf7.pdf

0 ? ? 1 天前回复 Vivian Gao

Prodigy 10 points

您好化学id匹配完成后，怎么设置？

bqStudio 没找到 Chemistry菜单

0 Vivian Gao 1 天前回复 ? ?

TI__Expert 4260 points

您好

如果您目前使用的是BQ27441-G1，您可以看一下它的TRM和数据手册。

TRM第6页有写：

Unlike some other Impedance Track fuel gauges, the bq27441-G1 cannot be programmed with specific battery chemistry profiles

www.ti.com.cn/.../sluuac9a.pdf

数据手册也有写

www.ti.com.cn/.../bq27441-g1.pdf

因为CHEM_ID是固定的，所以bqStudio没有Chemistry菜单。

0 ? ? 1 天前回复 Vivian Gao

Prodigy 10 points

您好

感谢解惑，目前我遇到的问题是，产品用的电池容量是5000mAh，电压范围是2.75V（放电截止），4.2V（满电）。

但是将参数配置完成后，电池电量结果不对。在电池电压3.6V的时候电量就是0了。

按《TI 电量计应用指导》是先匹配化学id，再学习阻抗表。是否可以通过学习阻抗表就可以优化电池电量准确度？

配置参数如下：

unsigned short const Designcapacity={5000}; //Design capacity=2500mAh 这个值随着电池的使用会变化

unsigned short const DesignEnergy={18500}; //Design Energy=2500*3.8mWh; Design Energy=Design capacity*3.7 for 4.2V battery,Design Energy=Design capacity*3.8 for 4.35V battery,

#define FCC_SIZE 5000 //满电容量

//220 充电

//5000*10/220=227

const uint16_t Taperrate ={500}; //Taper rate=500,taper rate=Design Capacity*10/taper current mA;(500*10/220 = 125) a little higher than charger taper current(~>20mA)

//Taperrate 是一个充电截止判定的量

//subclass 81

//放电电流大于62mA 5000*10 / 62.5ma = 800

const uint16_t Dsgcurrentthreshold ={800}; // ?50000/167=299mA, Dsg current threshold(num)=500, Dsg current threshold(mAh)=Design capacity*10/Dsg current threshold(num)=80mA

//充电电流一定大于这个电流 100mA 5000*10/100 = 500

const uint16_t Chgcurrentthreshold ={500}; //?Chg current threshold(num)=500, Chg current threshold(mAh)=Design capacity*10/Chg current threshold(num)=80mA,must smaller than charger taper current

//进入低功耗电流 5000 * 10 / 50ma = 1000

const uint16_t Quitcurrent ={1000}; //{0x03E8}; ? //Quit current threshold(num)=1000,Quit current threshold(mAh)=Design capacity*10/Quit current threshold(num)=40mA

#endif

程序如下：

bq27441_driver.c

#include "bq27441_driver.h"
#include "common.h"
#include "menter_i2c.h"
#include "dev_info.h"
#include "menter_ctrl.h"




void HAL_UART_Transmit(int *temp1,unsigned char*data,char data_len,int temp2)
{
  for (size_t i = 0; i < data_len; i++)
  {
    printf("%02x ",data[i]);
  }
  printf("\n");
}
void HAL_Delay(unsigned int data)
{
  vTaskDelay(data);

};
const uint16_t terminatevoltage ={0x012C};       //terminate voltage=3000mV,system shutdown voltage  ,      系统的正常工作电压
//
const uint16_t loadselect ={0x81};               //load select/load loadselectmode; 0x81 power-mode 0x01 current mode, normally use 0x81 ,if design capacity > 8500mAh change to 0x01
#define BATTERY_5000MAH
uint32_t Frack_Num;
// #define BATTERY_3200MAH
/**************************************************************************************
**************************************************************************************/


#ifdef BATTERY_5000MAH
//3200mAH    
unsigned short const Designcapacity={5000};     //Design capacity=2500mAh   这个值随着电池的使用会变化
unsigned short const DesignEnergy={18500};       //Design Energy=2500*3.8mWh; Design Energy=Design capacity*3.7 for 4.2V battery,Design Energy=Design capacity*3.8 for 4.35V battery,
#define   FCC_SIZE   5000      //满电容量

//220   充电
//5000*10/220=227
const uint16_t Taperrate ={500};              //Taper rate=500,taper rate=Design Capacity*10/taper current mA;(500*10/220 = 125) a little higher than charger taper current(~>20mA)  
//Taperrate  是一个充电截止判定的量

//subclass 81
//放电电流 大于62mA  5000*10 / 62.5ma = 800
const uint16_t Dsgcurrentthreshold ={800};    // ?50000/167=299mA,  Dsg current threshold(num)=500, Dsg current threshold(mAh)=Design capacity*10/Dsg current threshold(num)=80mA


//充电电流一定大于这个电流 100mA 5000*10/100 = 500
const uint16_t Chgcurrentthreshold ={500};    //?Chg current threshold(num)=500, Chg current threshold(mAh)=Design capacity*10/Chg current threshold(num)=80mA,must smaller than charger taper current


//进入低功耗电流 5000 * 10 / 50ma = 1000
const uint16_t Quitcurrent ={1000};  //{0x03E8}; ?    //Quit current threshold(num)=1000,Quit current threshold(mAh)=Design capacity*10/Quit current threshold(num)=40mA

#endif









/**************************************************************************************
**************************************************************************************/


#ifdef BATTERY_5000MAH
const uint16_t  Qmax ={5000};   //
#define RA_AVE  3
// 阻值*5000/3000               
// const uint16_t  Ra[] ={102, 102, 99, 107, 72, 59, 62, 63, 53, 47, 60, 70, 140, 369, 588};
// //源程序值3200mAh
// const uint16_t  Ra[] ={52, 52, 50, 54, 45, 50, 71, 82, 80, 75, 87, 82, 114, 264, 420};//                     
// const uint16_t  Ra[] ={0x66, 0x66, 0x63, 0x6b, 0x48, 0x3b, 0x3e, 0x3f, 0x35, 0x2f, 0x3c, 0x46, 0x8c, 0x171, 0x24c};   //?
// const uint16_t  Ra[] ={0x34, 0x34, 0x32, 0x36, 0x2d, 0x32, 0x47, 0x52, 0x50, 0x4b, 0x57, 0x52, 0x72, 0x108, 0x1a4}; 

const uint16_t  Ra[] ={33,33,32,35,29,32,45,52,51,48,56,52,73,169,269};

#endif
uint16_t bettery_volt,bettery_soc,bettery_fcc,bettery_temper,bettery_intemper;
int16_t bettery_avgCur;
/**************************************************************************************
**************************************************************************************/

static uint32_t bq_cmdWrite(uint8_t subaddr, uint8_t cmd);
static uint32_t bq_read(uint8_t *pBuf,  uint8_t addr, uint8_t len);
static uint32_t bq_MemoryWrite(uint8_t subaddr, uint16_t data );
static uint8_t GetCheckSum(uint8_t  addr);
static void  bq_Read_Ta_and_Qmax(void);
static void bq_fullReset(void);
static void bq_CONFIG_subclass52(void);
static void bq_CONFIG_subclass51(void);
static void bq_CONFIG_subclass59(void);
static uint32_t bq_ConfigRead(void);
static uint32_t bq_Rdarg(uint16_t *volt, int16_t *avgCur, uint16_t *soc, uint16_t *fcc, uint16_t *temper, uint16_t *intemper);
uint16_t bq_ITPOR(void);
/**************************************************************************************
**************************************************************************************/

/**************************************************************************************
**************************************************************************************/


/********************************************************
向subaddr 这个地址写入cmd这个指令（写单个指令)
 ********************************************************/
uint32_t bq_cmdWrite(uint8_t subaddr, uint8_t cmd) 
{
  return I2C_MAST_WRITE(BQ2744_ADDRESS,subaddr,&cmd,1,1);
    // return I2C_WriteData(BQ2744_ADDRESS,subaddr,&cmd,1);
    // return HAL_I2C_Mem_Write(&hi2c1,BQ2744_ADDRESS,subaddr,I2C_MEMADD_SIZE_8BIT,&cmd,1,0xff);
}
/*************************************  
  *************************************/
uint32_t bq_read(uint8_t *pBuf,  uint8_t addr, uint8_t len) 
{ 
  return I2C_MAST_READ(BQ2744_ADDRESS, addr, pBuf, len,1);
  // return I2C_ReadData(BQ2744_ADDRESS, addr, pBuf, len);
  //return HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, addr, len, pBuf, len, 0xfff);   
    
}
/********************************************************
*********************************************************/
uint32_t bq_MemoryWrite(uint8_t subaddr, uint16_t data )
{
    uint8_t Mdata=(data>>8);
    uint8_t Ldata=(data&0xFF); 
    // I2C_WriteData(BQ2744_ADDRESS,subaddr,&Mdata,1);  
    // HAL_I2C_Mem_Write(&hi2c1,BQ2744_ADDRESS,subaddr,I2C_MEMADD_SIZE_8BIT,&Mdata,1,0xff);
    // return I2C_WriteData(BQ2744_ADDRESS,subaddr+1,&Ldata,1);
    //return HAL_I2C_Mem_Write(&hi2c1,BQ2744_ADDRESS,subaddr+1,I2C_MEMADD_SIZE_8BIT,&Ldata,1,0xff);    
    I2C_MAST_WRITE(BQ2744_ADDRESS,subaddr,&Mdata,1,1);  
     return I2C_MAST_WRITE(BQ2744_ADDRESS,subaddr+1,&Ldata,1,1);
}
/********************************************************
*********************************************************/
uint8_t GetCheckSum(uint8_t  addr) 
{
    uint8_t checksum = 0, i;
    uint8_t rtBuf[2];
    
    for (i = 0; i < 32; i++) 
    {
        rtBuf[0] = 0;
        bq_read(rtBuf, addr, 1);
        checksum = checksum + rtBuf[0];
        addr++;
    }
    
    checksum = 0xFF - checksum;
    return checksum;
}
/********************************************************
*********************************************************/
void  bq_Read_Ta_and_Qmax(void)
{
  int huart2;
	unsigned short  qmax=0x00;
	uint8_t  Ra_table[32]= {0x0A};
	unsigned short  cap=0x00;
	
	uint8_t buf[1];
 	uint8_t tbuf[2];   
        
	uint8_t i;
        tbuf[0]=0;
        tbuf[1]=0;       
        Ra_table[31]='\r';
        Ra_table[30]='\n';
	bq_cmdWrite(0x00,0x00);   //Places the device in UNSEALED access mode.
	bq_cmdWrite(0x01,0x80);

	bq_cmdWrite(0x00,0x00);
	bq_cmdWrite(0x01,0x80);


	bq_cmdWrite(0x61,0x00);       // enables BlockData() to access to RAM.

	bq_cmdWrite(0x3e,0x52);     //选择0x52区域      //access the state subclass (decimal 82, 0x52 hex)

	bq_cmdWrite(0x3f,0x00);         //use offset 0x00 for offsets 0 to 31


	bq_read(buf, 0x40, 2);
	qmax = (buf[0] << 8) | buf[1];  //高低位交换

	bq_read(buf, 0x4A, 2);
	cap = (buf[0] << 8) | buf[1]; //高低位交换


	bq_cmdWrite(0x3e,0x59);//选择0x59区域
	bq_cmdWrite(0x3f,0x00);

	for(i=0; i<30; i++)
	{
		bq_read(buf, 0x40+i, 1);
		Ra_table[i] = buf[0]; //高低位交换
	}
        HAL_UART_Transmit(&huart2,Ra_table,32,0xff); 
        
        
        Frack_Num++;
        tbuf[0]=Frack_Num>>24;
        HAL_UART_Transmit(&huart2,tbuf,1,0xff);
        tbuf[0]=((Frack_Num>>16)&0xFF);
        HAL_UART_Transmit(&huart2,tbuf,1,0xff);
        tbuf[0]=((Frack_Num>>8)&0xFF);
        HAL_UART_Transmit(&huart2,tbuf,1,0xff);       
        tbuf[0]=(Frack_Num&0xFF);
        HAL_UART_Transmit(&huart2,tbuf,1,0xff);         
//	bq_cmdWrite(0x3e,0x40);//选择0x59区域
//	bq_cmdWrite(0x3f,0x00);
//
//
//        bq_read(buf, 0x40, 1);
//        HAL_UART_Transmit(&huart2,buf,1,0xff);         
//        bq_read(tbuf, 0x41, 1);
//        HAL_UART_Transmit(&huart2,tbuf,1,0xff);  
        	
}

/********************************************************
*********************************************************/
void bq_fullReset(void)
{
	if (bq_cmdWrite(0x00,0x00) || bq_cmdWrite(0x01,0x80))   //Places the device in UNSEALED access mode.
	{
	    return ;
	}

	if (bq_cmdWrite(0x00,0x00) || bq_cmdWrite(0x01,0x80))
	{
	    return ;
	}
	
	if (bq_cmdWrite(0x00,0x41) || bq_cmdWrite(0x01,0x00)) //Performs a full device reset.
	{
	    return;
	}
}

/********************************************************
*********************************************************/

void bq_CONFIG_subclass52(void) 
{
    uint8_t checksum = 0;
    bq_cmdWrite(0x3e, 0x52); //选择0x52区域      //access the state subclass (decimal 82, 0x52 hex)
    bq_cmdWrite(0x3f, 0x00); //use offset 0x00 for offsets 0 to 31

    
    bq_MemoryWrite(0x40, Qmax);

    bq_MemoryWrite(0x50, terminatevoltage); //terminatevoltage 截止电压(系统能够正常运行的最低电压) 

    bq_cmdWrite(0x45, loadselect);

    bq_MemoryWrite(0x4A, Designcapacity); //电池容量  mAh

    bq_MemoryWrite(0x4C, DesignEnergy); //mWh

    bq_MemoryWrite(0x5B, Taperrate);

    checksum = GetCheckSum(0x40);

    bq_cmdWrite(0x60, checksum); //0xba  checksum

}
void bq_CONFIG_subclass51(void) //充放电阈值设置
{
    uint8_t checksum = 0;
    bq_cmdWrite(0x3e, 0x51); //选择0x51区域
    bq_cmdWrite(0x3f, 0x00);
    bq_MemoryWrite(0x40, Dsgcurrentthreshold); //放电电流
    bq_MemoryWrite(0x42, Chgcurrentthreshold); //充电电流，充电电流的判断标准
    bq_MemoryWrite(0x44, Quitcurrent); //静态电源  
    checksum = GetCheckSum(0x40);
    bq_cmdWrite(0x60, checksum); //0x5e
}

void bq_CONFIG_subclass59(void)//内阻表设置
{
    uint8_t checksum = 0, i = 0;
    bq_cmdWrite(0x3e, 0x59); //选择0x59区域
    bq_cmdWrite(0x3f, 0x00);
    for (i = 0; i < 15; i++) {
        bq_MemoryWrite(0x40 + i * 2, (int)(Ra[i]*RA_AVE));
    }
    checksum = GetCheckSum(0x40);
    bq_cmdWrite(0x60, checksum);
}

/********************************************************
返回0,  进入配置模式并退出成功, 返回1, 进入配置失败, 返回0xFE, 超时
*********************************************************/
uint32_t bq_Config(void) 
{  
	uint8_t  rtBuf[2];
	uint16_t value;
	uint32_t result;
	
	static uint32_t m_tryCnt = 0;

  	if (m_tryCnt++ > 10)
	{	   
	    m_tryCnt = 0;
	    return 0xFE;
	}

    if (bq_cmdWrite(0x00, 0x00) || bq_cmdWrite(0x01, 0x80)) //Places the device in UNSEALED access mode.
    {
        cmsLog_error("entry unsealed err\n");
        
        return 1;
    }
    
    if (bq_cmdWrite(0x00, 0x00) || bq_cmdWrite(0x01, 0x80))
    {
        cmsLog_error("entry unsealed err1\n");
        return 1;
    }
    
    if (bq_cmdWrite(0x00, 0x13) || bq_cmdWrite(0x01, 0x00))
    {
        cmsLog_error("entry config mode err\n");
        return 1;
    }
    
    HAL_Delay(1);

    result = bq_read(rtBuf, bq27421CMD_FLAG_LSB, 2);
    if (result == 0)
    {
    	value = (rtBuf[1] << 8) | rtBuf[0];

    	if (!(value & 0x10))
    	{    		
    		
            cmsLog_error("upmode=0\n");         
    	     bq_cmdWrite(0x61,0x00);       // enables BlockData() to access to RAM.

           bq_CONFIG_subclass52();
                    
           bq_CONFIG_subclass51();

           bq_CONFIG_subclass59();
        
            bq_cmdWrite(0x00,0x42); //软复位 退出配置模式            
            bq_cmdWrite(0x01,0x00);

            bq_cmdWrite(0x00,0x00);
            bq_cmdWrite(0x01,0x00);
           
            m_tryCnt = 0;            
    	}
    	else
    	{
          
           cmsLog_error("upmode=1\n");
    	     bq_cmdWrite(0x61,0x00);       // enables BlockData() to access to RAM.

           bq_CONFIG_subclass52();
                    
           bq_CONFIG_subclass51();

           bq_CONFIG_subclass59();
        
            bq_cmdWrite(0x00,0x42); //软复位 退出配置模式            
            bq_cmdWrite(0x01,0x00);

            bq_cmdWrite(0x00,0x00);
            bq_cmdWrite(0x01,0x00);          
    	    result = 1;  
    	    cmsLog_error("value=0x%x\n", value);
    	}
    }  

    cmsLog_debug(" %s\n", result == 0 ? "Ok" : "Fail");
    return result;
}
/********************************************************
返回0, 配置成功, 返回1, 配置失败  返回其他, 配置超时
*********************************************************/
uint32_t bq_ConfigRead(void)
{
    uint8_t  rtBuf[2] = {0};
	uint16_t value;
	uint32_t result;

    result = bq_read(rtBuf, bq27421CMD_FLAG_LSB, 2);

    if (result != 0)
    {
        return 0xFF;
    }

    if (result == 0) 
    {
        value = (rtBuf[1] << 8) | rtBuf[0];
        
        if (value & 0x10) 
        {   
            result = 1;
        }
        else
        {
            bq_cmdWrite(0x00,0x20);
            bq_cmdWrite(0x01,0x00);
        }
    }

    return result;
}

/********************************************************
 读参数
********************************************************/
uint32_t bq_Rdarg(uint16_t *volt, int16_t *avgCur, uint16_t *soc, uint16_t *fcc,uint16_t *temper,uint16_t *intemper)
{
  uint8_t  lrtBuf[1];
  uint8_t  mrtBuf[1];
              
  uint16_t  value;	
  uint16_t ret1;
  uint16_t ret2;

// int I2C_ReadData(uint8_t slaveAddr, uint8_t regAddr, uint8_t *pData, uint16_t dataLen);
  ret1=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_VOLT_LSB,lrtBuf, 1,1);
  ret2=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_VOLT_MSB,mrtBuf, 1,1);
  //ret1=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_VOLT_LSB, 1, lrtBuf, 1, 0xfff);   //volt  为电压  
  //ret2=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_VOLT_MSB, 1, mrtBuf, 1, 0xfff); 
  if(0 == ret1 && ret2 == 0)   
  {
    value = (mrtBuf[0] << 8) |lrtBuf[0];
    
    *volt = value;
       
  }
  else
  {
    return 0xF1;
  }
  ret1=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_AI_LSB,lrtBuf, 1,1);
  ret2=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_AI_MSB,mrtBuf, 1,1);
  //ret1=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_AI_LSB, 1, lrtBuf, 1, 0xfff);     //avgCur 为平均电流
  //ret2=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_AI_MSB, 1, mrtBuf, 1, 0xfff); 
  if(0 == ret1 && ret2 == 0)   
  {
    value = (mrtBuf[0] << 8) |lrtBuf[0];
    
    *avgCur = value;    
  }
  else
  {
    return 0xF1;
  } 
  ret1=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_SOC_LSB,lrtBuf,1,1);
  ret2=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_SOC_MSB,mrtBuf,1,1);  
  //ret1=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_SOC_LSB, 1, lrtBuf, 1, 0xfff);    //soc 为电量百份比   
  //ret2=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_SOC_MSB, 1, mrtBuf, 1, 0xfff); 
  if(0 == ret1 && ret2 == 0)   
  {
    value = (mrtBuf[0] << 8) |lrtBuf[0];
    
    *soc = value;  
  }
  else
  {
    return 0xF1;
  }
  ret1=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_FCC_LSB,lrtBuf, 1,1);
  ret2=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_FCC_MSB,mrtBuf, 1,1); 
  //ret1=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_FCC_LSB, 1, lrtBuf, 1, 0xfff);   //FCC为充电电量
  //ret2=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_FCC_MSB, 1, mrtBuf, 1, 0xfff); 
  if(0 == ret1 && ret2 == 0)   
  {
    value = (mrtBuf[0] << 8) |lrtBuf[0];
    
    *fcc = value;
  }
  else
  {
    return 0xF1;
  }   
  ret1=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_TEMP_LSB,lrtBuf, 1,1);
  ret2=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_TEMP_MSB,mrtBuf, 1,1); 
  //ret1=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_FCC_LSB, 1, lrtBuf, 1, 0xfff);   //FCC为充电电量
  //ret2=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_FCC_MSB, 1, mrtBuf, 1, 0xfff); 
  if(0 == ret1 && ret2 == 0)   
  {
    value = (mrtBuf[0] << 8) |lrtBuf[0];
    
    *temper = value;
  }
  else
  {
    return 0xF1;
  } 


  ret1=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_ITEMP_LSB,lrtBuf, 1,1);
  ret2=I2C_MAST_READ(BQ2744_ADDRESS, bq27421CMD_ITEMP_MSB,mrtBuf, 1,1); 
  //ret1=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_FCC_LSB, 1, lrtBuf, 1, 0xfff);   //FCC为充电电量
  //ret2=HAL_I2C_Mem_Read(&hi2c1, BQ2744_ADDRESS, bq27421CMD_FCC_MSB, 1, mrtBuf, 1, 0xfff); 
  if(0 == ret1 && ret2 == 0)   
  {
    value = (mrtBuf[0] << 8) |lrtBuf[0];
    
    *intemper = value;
  }
  else
  {
    return 0xF1;
  } 



    return ret1;
}
/********************************************************
返回1 需要配置 返回0 已配置过 返回其他值出错
********************************************************/
uint16_t bq_ITPOR(void)
{
	uint8_t  rtBuf[2] = {0};

	uint32_t ret;

	ret  = bq_read(rtBuf, bq27421CMD_FLAG_LSB, 1);

	if (ret != 0)
	{
	    return 0xFF;
	}	

    if (rtBuf[0] & 0x20)
    {
        return 1;
    }

    return 0xAA;    
}

extern char power_energy;

#include <time.h>
uint8_t BQ25895_STATE(){

  static time_t now;
  static time_t last=0;
  static uint32_t num=0;
  char strftime_buf[64];
  struct tm timeinfo; 
  static int low_time=0;
  time(&now);
  bq_Rdarg(&bettery_volt, &bettery_avgCur, &bettery_soc, &bettery_fcc,&bettery_temper,&bettery_intemper);
  printf("%d,%ld,%d,%d,%d,%d,%0.2f,%0.2f\n",num,now,bettery_volt, bettery_avgCur, bettery_soc, bettery_fcc,(float)bettery_temper/10.0-273.15,(float)bettery_intemper/10.0-273.15);
  if (bettery_volt<2750)
  {
    low_time++;
    // ctrl_off();
  }
  else
  {
    low_time=0;
  }
  if(low_time>3)
    ctrl_off();
  
  last=now;
  num++;
  dev_info_data.bettery_enage=bettery_soc;
  dev_info_data.bettery_volite=(float)bettery_volt/1000;
  if(bettery_soc<10)
    power_energy=0;
  else if (bettery_soc<40)
  {
        power_energy=1;
  }
  else if (bettery_soc<70)
  {
        power_energy=2;
  }  
  else if (bettery_soc<90)
  {
        power_energy=3;
  }
  else
  {
        power_energy=4;
  }

  if((bettery_avgCur >20)&&bettery_soc<91)
  // if((avgCur >20)&&HAL_GPIO_ReadPin(TYPEC_DEC_GPIO_Port,TYPEC_DEC_Pin)&&soc<91)
  {
    return BQ_Charging;
  }else if(bettery_soc>90){
    return BQ_Charge_Done;
  }else if(bettery_avgCur<(-150)){
    return Rod_Charging;
  }
  return 1;
}


uint8_t getBoxBattery(void)
{ 
  uint16_t volt,soc,fcc ;
  int16_t avgCur;     
  
  if(bq_ITPOR() !=0xAA )
  {
    HAL_Delay(500);
    bq_Config();
    if(bq_ConfigRead() != 0)
      return 0xFE;          
    
  }
  
  bq_Rdarg(&volt, &avgCur, &soc, &fcc,&bettery_temper,&bettery_intemper);
  
  return soc&0xFF;
}



uint8_t Batter_Gauge_Test(){
  uint8_t data;
  uint16_t volt,soc,fcc ;
  int16_t avgCur;     
  volt=bq_ITPOR();
        if(volt == 1 )
        {
          bq_Config();
          if(bq_ConfigRead() != 0)
          return 2;          
        }
  bq_Read_Ta_and_Qmax();      
  bq_Rdarg(&volt, &avgCur, &soc, &fcc,&bettery_temper,&bettery_intemper);
  return 1;
  
}

/********************************************************
返回0,  进入配置模式并退出成功, 返回1, 进入配置失败, 返回0xFE, 超时
*********************************************************/
uint32_t bq_Config_nww(void) 
{  
  uint8_t  rtBuf[2];
  uint16_t value;
  uint32_t result;
  
  static uint8_t m_tryCnt = 0;
  
  if (m_tryCnt++ > 10)
  {	   
    m_tryCnt = 0;
    return 0xFE;
  }

  if (bq_cmdWrite(0x00, 0x00) || bq_cmdWrite(0x01, 0x80)) //Places the device in UNSEALED access mode.
  {
    return 1;
  }
    
  if (bq_cmdWrite(0x00, 0x00) || bq_cmdWrite(0x01, 0x80))
  {
    return 2;
  }
  
  if (bq_cmdWrite(0x00, 0x13) || bq_cmdWrite(0x01, 0x00))
  {
    return 3;
  }
    
  HAL_Delay(1);
  result=1;
  while(result){
    result = bq_read(rtBuf, bq27421CMD_FLAG_LSB, 2);
    if (result == 0)
    {
      value = (rtBuf[1] << 8) | rtBuf[0];
      result=(value & 0x10);
      
    }
  
  }
  bq_cmdWrite(0x61,0x00);       // enables BlockData() to access to RAM.
  
  bq_CONFIG_subclass52();
  
  return result;
}
void bettery_task(void);
void bq27441_init(void){ 
        if(bq_ITPOR() == 1){ 
          
         cmsLog_error("need_config\n");           
            HAL_Delay(110);
            bq_Config();
            HAL_Delay(10);            
            bq_ConfigRead();


//            bq_fullReset();            
        }
        else
        cmsLog_error("noconfig=0\n");          
  xTaskCreatePinnedToCore(bettery_task, "bettery_task", 4096, NULL, 2, NULL, 1);       
}



void bettery_task(void)
{
    printf("Num,ElapsedTime,Voltage_mV,Current_mA,SOC,FCC,Temperature,INTemperature\n");
    while (1)
    {
      if (tcp_ota_updating!=true)
      {
        BQ25895_STATE();
      }
      // printf("%d\n",tcp_ota_updating);
      vTaskDelay(pdMS_TO_TICKS(5000));
    }

}

bq27441_driver.h

0 Vivian Gao 1 天前回复 ? ?

TI__Expert 4260 points

您好

学习可以使容量这些计算更准确，学习成功的判断标准是Qmax、Ra table是否更新成功，可以查看Update Status, Ra flag。

学习这个过程，请您参考之前发给您的电量计应用手册和下方链接

https://www.tij.co.jp/jp/lit/an/slua903/slua903.pdf

很遗憾，无法为您逐一检查配置，请按照TRM看软件配置。

如果有新问题，请重新发帖。

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