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理想二极管芯片中使用的背靠背NMOS的过电流能力的上限如何确定?



  1. 理想二极管芯片既实现防反接又实现防倒灌的电路,里面的两个NMOS的过电流能力的上限是什么(从理想二极管的角度,而不是从NMOS的SOA角度)?