C6416 FLASH

看一下是不是没有满足Flash写的时序要求？试试在flash write命令后多等些时间再写下一个数。

我在执行完一个写操作之后是回读写入的数据，看读出的数据是否等于写入的数据，如果不等于的话就一直等待，然后读出的数据就一直是FF，过不去了！控制CE的寄存器的那些等待时间我基本都设置成最大了！我用几乎相同的代码读写16bit连接方式的FLASH是可以的，我也用示波器测试了FLASH相应管脚上的信号时序，感觉也看不出明显错！有没有一些检测硬件好坏的测试方法啊？确定是不是硬件有问题呢！谢谢啊

检查一下你的两个flash的命令是否有区别。

下面是我在C6416上测试过的nor flash相关代码:

typedef unsigned int FLASH_DATA_TYPE;

#define FlashBaseAddr 0x064000000 //EMIFB CE1， COPY TO ADDRESS 0.
void Init_Emif()
{
#define EMIFA_GCTL 0x01800000
#define EMIFA_CE1 0x01800004
#define EMIFA_CE0 0x01800008
#define EMIFA_CE2 0x01800010
#define EMIFA_CE3 0x01800014
#define EMIFA_SDRAMCTL 0x01800018
#define EMIFA_SDRAMTIM 0x0180001c
#define EMIFA_SDRAMEXT 0x01800020
#define EMIFA_CE1SECCTL 0x01800044
#define EMIFA_CE0SECCTL 0x01800048
#define EMIFA_CE2SECCTL 0x01800050
#define EMIFA_CE3SECCTL 0x01800054

#define EMIFB_GCTL 0x01A80000
#define EMIFB_CE1 0x01A80004
#define EMIFB_CE0 0x01A80008
#define EMIFB_CE2 0x01A80010
#define EMIFB_CE3 0x01A80014
#define EMIFB_SDRAMCTL 0x01A80018
#define EMIFB_SDRAMTIM 0x01A8001c
#define EMIFB_SDRAMEXT 0x01A80020
#define EMIFB_CE1SECCTL 0x01A80044
#define EMIFB_CE0SECCTL 0x01A80048
#define EMIFB_CE2SECCTL 0x01A80050
#define EMIFB_CE3SECCTL 0x01A80054

/* Setup EMIFB Version 2 (120 MHz EMIF) */

*(int*)EMIFB_GCTL = 0x00002060;

*(int*)EMIFB_CE1 = 0xffffff03; // CE1 Flash 8-bit---BOOTLOADER

/* EMIFA Version 2 (120MHz EMIF) */
*(int*)EMIFA_GCTL = 0x00012070;
*(int*)EMIFA_CE0 = 0x23228c43; // CE0 SDRAM 1Mx32bitx4bank=16M byte
*(int*)EMIFA_CE1 = 0x23228c43; // CE1 8-bit Async
*(int*)EMIFA_CE2 = 0x23228c43; // CE2 Daughtercard 32-bit async
*(int*)EMIFA_CE3 = 0x23228c43; // CE3 Daughtercard 32-bit async

*(int*)EMIFA_SDRAMCTL = 0x56228000; // SDRAM control

*(int*)EMIFA_SDRAMTIM = 0x00001E1D; // SDRAM timing refresh

*(int*)EMIFA_CE2SECCTL = 0x0032; //Read space;
*(int*)EMIFA_CE3SECCTL = 0x0030; // Write back Space;

*(int*)EMIFA_SDRAMCTL |= 0x01000000;
}

void Chip_Erase()
{
//Unlock command
*(unsigned char *)(FlashBaseAddr + 0xAAA) = 0xAA;
*(unsigned char *)(FlashBaseAddr + 0x555) = 0x55;
*(unsigned char *)(FlashBaseAddr + 0xAAA) = 0x80;

*(unsigned char *)(FlashBaseAddr + 0xAAA) = 0xAA;
*(unsigned char *)(FlashBaseAddr + 0x555) = 0x55;
*(unsigned char *)(FlashBaseAddr + 0xAAA) = 0x10;

// Polling D2, D6, D7 to determine when completed.
// Polling D7 change to "0" after erase complete.
while ((*(unsigned char *)FlashBaseAddr) != 0xff);
}

int Write_Byte(unsigned int Address, unsigned char data)
{
unsigned int timeout = 0;

//Unlock command
*(unsigned char *)(FlashBaseAddr+0xAAA) = 0xAA;
*(unsigned char *)(FlashBaseAddr+0x555) = 0x55;

//Setup command
*(unsigned char *)(FlashBaseAddr+0xAAA) = 0xA0;

//Write data to destination
*(unsigned char *)Address = data;

do timeout += 1;
while((*(unsigned char *)Address) != data && timeout < 0xffff);

if(timeout ==0xffff)
return -1;
else
return 0;
// flashnext++;

}

main()
{
unsigned int i, Address;

Address = FlashBaseAddr;
Init_Emif();
printf("C64x Flash Burn, 8-bit Flash Boot Mode, Write by CHAO\n");

printf("Erasing Flash, Please Waiting......\n");
Chip_Erase();

printf("Reset Flash to Normal Mode\n");
*(unsigned char *)FlashBaseAddr = 0xF0; // Reset Flash to Normal Mode;

printf("Programming Begin Start From 0x64000000, Length = 0x%x; Please Wait Again......\n", hex_CNT );

for(i=0; i<hex_CNT; i++)
{
if(Write_Byte(Address++, hex[i]) == -1)
{
printf("Write error at Address: 0x%x\n", Address-1);
return;
}
}

printf("Write Complete Flag\n");
for (i= 0; i<4; i++)
Write_Byte(Address++, 0); // Write complete flag;

printf("Flash Burn End, Reset Flash to Normal Mode.\n");
*(unsigned char *)FlashBaseAddr = 0xF0; // Reset Flash to Normal Mode;

printf("Re-Power On the Board.\n");
while(1);
}

qinbiao yang 说：

还有就是感觉芯片的那个Byte引脚，控制8bit，16bit方式的引脚下拉的时候必须是直接接地或者0欧电阻接地啊，不能以太大电阻下拉到地啊！

对于这种情况，你可以量一下电阻上面那端（接地的另一端）的电平到底是多少，是不是没有低于VIL.