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DDR3读取一个地址中的数据需要129个左右的时钟周期正常吗?



工程师你们好,ddr3问题如下(DSPC6655)

DDR3的的连接有专用的DDR3链接口,配好相应寄存器后是不是访问它就可以通过地址访问的形式就能读写数据了?(ox80000000开始)

我使用CCS5.5上的clock测试每一次去读或者写DDR3地址上的数据时,发现读数据每一个地址上的数据需要129个左右的时钟周期,而写一个数据只需要13个时钟周期,这是正常的吗?我以前用6713时在EMIF总线上外挂SDRAM时,发现读写都只需18个时钟周期左右,请问下专用口和EMIF总线有什么区别?(读:int a = *(unsigned int *)(0x80000010);写*(unsigned int*)(0x80000010) = 0x1;)

附上DDR3的GEL配置

ddr3_setup_auto_lvl_1333()
{
    int i,TEMP,startlo, stoplo,starthi, stophi;
    KICK0 = KICK0_UNLOCK;
    KICK1 = KICK1_UNLOCK;
    /* Wait for PLL to lock = min 500 ref clock cycles.
       With refclk = 100MHz, = 5000 ns = 5us */
    Delay_milli_seconds(1);
    /***************** 3.2 DDR3 PLL Configuration ************/
    /* Done before */
    /**************** 3.0 Leveling Register Configuration ********************/
    /* Using partial automatic leveling due to errata */
    /**************** 3.3 Leveling register configuration ********************/
    DDR3_CONFIG_REG_0 &= ~(0x007FE000);  // clear ctrl_slave_ratio field
    DDR3_CONFIG_REG_0 |= 0x00200000;     // set ctrl_slave_ratio to 0x100
    DDR3_CONFIG_REG_12 |= 0x08000000;    // Set invert_clkout = 1
    DDR3_CONFIG_REG_0 |= 0xF;            // set dll_lock_diff to 15
    //From 4.2.1 Executing Partial Automatic Leveling -- Start
    DDR3_CONFIG_REG_23 |= 0x00000200;    //Set bit 9 = 1 to use forced ratio leveling for read DQS
    //From 4.2.1 Executing Partial Automatic Leveling -- End
    //Values with invertclkout = 1
    /**************** 3.3 Partial Automatic Leveling ********************/
    DATA0_WRLVL_INIT_RATIO = 0x00;
    DATA1_WRLVL_INIT_RATIO = 0x00;
    DATA2_WRLVL_INIT_RATIO = 0x00;
    DATA3_WRLVL_INIT_RATIO = 0x00;
    DATA4_WRLVL_INIT_RATIO = 0x33;
    DATA5_WRLVL_INIT_RATIO = 0x3A;
    DATA6_WRLVL_INIT_RATIO = 0x2C;
    DATA7_WRLVL_INIT_RATIO = 0x2C;
    DATA8_WRLVL_INIT_RATIO = 0x21;
    DATA0_GTLVL_INIT_RATIO = 0x00;
    DATA1_GTLVL_INIT_RATIO = 0x00;
    DATA2_GTLVL_INIT_RATIO = 0x00;
    DATA3_GTLVL_INIT_RATIO = 0x00;
    DATA4_GTLVL_INIT_RATIO = 0xB7;
    DATA5_GTLVL_INIT_RATIO = 0xB1;
    DATA6_GTLVL_INIT_RATIO = 0xA4;
    DATA7_GTLVL_INIT_RATIO = 0xA4;
    DATA8_GTLVL_INIT_RATIO = 0x98;
    //Do a PHY reset. Toggle DDR_PHY_CTRL_1 bit 15 0->1->0
    DDR_DDRPHYC &= ~(0x00008000);
    DDR_DDRPHYC |= (0x00008000);
    DDR_DDRPHYC &= ~(0x00008000);
    /***************** 3.4 Basic Controller and DRAM Configuration ************/
    DDR_SDRFC    = 0x0000515C;    // enable configuration
    /* DDR_SDTIM1   = 0x1557B9BD; */
    TEMP = 0;
    TEMP |= 0x09 << 25; // T_RP bit field 28:25
    TEMP |= 0x09 << 21; // T_RCD bit field 24:21
    TEMP |= 0x09 << 17; // T_WR bit field 20:17
    TEMP |= 0x17 << 12; // T_RAS bit field 16:12
    TEMP |= 0x20 << 6; // T_RC bit field 11:6
    TEMP |= 0x1 << 3; // T_RRD bit field 5:3
    TEMP |= 0x4; // T_WTR bit field 2:0
    DDR_SDTIM1 = TEMP;
    /* DDR_SDTIM2   = 0x304F7FE3; */
    TEMP = 0;
    TEMP |= 0x3 << 28; // T_XP bit field 30:28
    TEMP |= 0x71 << 16; // T_XSNR bit field 24:16
    TEMP |= 0x1ff << 6; // T_XSRD bit field 15:6
    TEMP |= 0x4 << 3; // T_RTP bit field 5:3
    TEMP |= 0x3; // T_CKE bit field 2:0
    DDR_SDTIM2 = TEMP;
    /*  DDR_SDTIM3   = 0x559F849F; */
    TEMP = 0;
    TEMP |= 0x5 << 28; // T_PDLL_UL bit field 31:28 (fixed value)
    TEMP |= 0x5 << 24; // T_CSTA bit field 27:24 (fixed value)
    TEMP |= 0x4 << 21; // T_CKESR bit field 23:21
    TEMP |= 0x3f << 15; // T_ZQCS bit field 20:15
    TEMP |= 0x6A << 4; // T_RFC bit field 12:4
    TEMP |= 0xf; // T_RAS_MAX bit field 3:0 (fixed value)
    DDR_SDTIM3 = TEMP;
    DDR_DDRPHYC  = 0x0010010F;
    DDR_ZQCFG    = 0x70074c1f;
    DDR_PMCTL    = 0x0;
    //DDR_SDRFC = 0x0000144F; // enable configuration
    /* DDR_SDCFG    = 0x63077AB3; */
    /* New value with DYN_ODT disabled and SDRAM_DRIVE = RZQ/7 //0x63222A32;    // last config write DRAM init occurs */
    TEMP = 0;
    TEMP |= 0x3 << 29; // SDRAM_TYPE bit field 31:29 (fixed value)
    TEMP |= 0x0 << 27; // IBANK_POS bit field 28:27
    TEMP |= 0x2 << 24; // DDR_TERM bit field 26:24
    TEMP |= 0x2 << 21; // DYN_ODT bit field 22:21
    TEMP |= 0x1 << 18; // SDRAM_DRIVE bit field 19:18
    TEMP |= 0x3 << 16; // CWL bit field 17:16
    TEMP |= 0x1 << 14; // NM bit field 15:14
    TEMP |= 0xE << 10; // CL bit field 13:10
    TEMP |= 0x5 << 7; // ROWSIZE bit field 9:7
    TEMP |= 0x3 << 4; // IBANK bit field 6:4
    TEMP |= 0x0 << 3; // EBANK bit field 3:3
    TEMP |= 0x2; // PAGESIZE bit field 2:0
    DDR_SDCFG = TEMP;
    //Wait 600us for HW init to complete
    Delay_milli_seconds(1);
    DDR_SDRFC = 0x0000144F;       //Refresh rate = (7.8*666MHz)
    /**************** 4.2.1 Executing Partial Automatic Leveling ********************/
    DDR_RDWR_LVL_RMP_CTRL = 0x80000000; //enable full leveling
    DDR_RDWR_LVL_CTRL = 0x80000000; //Trigger full leveling - This ignores read DQS leveling result and uses ratio forced value 
    //(0x34) instead
    //Wait for min 1048576 DDR clock cycles for leveling to complete = 1048576 * 1.5ns = 1572864ns = 1.57ms.
    //Actual time = ~10-15 ms
    Delay_milli_seconds(1);
    GEL_TextOut("\nDDR3 initialization is complete.\n");
}
  • 能贴上您的完整测试程序吗?

    不建议用CCS上的clock去测试,可以用TSC模块去测试,这个是硬件测试的,比较准确

    置顶帖中有完整的DDR3 memory test工程可以参考这个工程来测试,如下是TI官方测出的DDR3 memory 性能指标