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c6678 nandflash疑问



TMDSEVMC6678LE开发版,采用论坛提供的NANDFLAH例子,发现对flash操作的三个例子中,flash_memfill_test和flash_bit_walking_test能通过测试,但是flash_addrtest例子却总是输出错误,感觉读操作出现了错误,无法读数据,请问是怎么回事呢?谢谢

  • 您好,我这边在EVM6678LE上运行下面链接中的EMIF工程,测试FLASH_MEM_AddrTest是可以通过的,log如下,麻烦确认一下使用的工程及测试log,谢谢。

    http://www.deyisupport.com/question_answer/dsp_arm/c6000_multicore/f/53/t/47664.aspx

    [C66xx_0] Initialize DSP main clock = 100.00MHz/1x10 = 1000MHz
    Initializing NAND flash...
    Manufacturer ID = 20h, Device ID = 36h
    this is not an ONFI compliant device
    NAND FLASH size = 512 x 32 x 4096 = 67108864 Bytes
    Erasing blocks 4080 through 4095
    Passed Memory Fill Test from 0x 3fc0000 to 0x 4000000 with pattern 0x 0
    Erasing blocks 4080 through 4095
    Passed Memory Fill Test from 0x 3fc0000 to 0x 4000000 with pattern 0xaaaaaaaa
    Erasing blocks 4080 through 4095
    Passed Memory Fill Test from 0x 3fc0000 to 0x 4000000 with pattern 0x55555555
    Erasing blocks 4080 through 4095
    Passed Memory Address Test from 0x 3fc0000 to 0x 4000000
    FLASH test complete.