Hi all:
使用dvr4.1的开发包,以前用的海力士的NandFlash 使用正常,最近更新到新的NandFlash K9F1G08U0E-SCB0 烧写正常,启动过程中出现:
Empty flash at 0x0251fcb4 ends at 0x0251fcb8
jffs2_scan_eraseblock(): Magic bitmask 0x1985 not found at 0x02520000: 0xdf35 instead
...
000007d0: 00 00 ff ff ff ff ff ff 00 97 ff ff ff ff 00 00
000007e0: ff ff ff ff ff ff ff ff 44 00 00 00 1d fb f7 88
000007f0: ff ff ff ff 02 00 ff ff ed 81 ff ff ff ff 00 00
Write of 68 bytes at 0x02ba07e4 failed. returned -5, retlen 0
Not marking the space at 0x02ba07e4 as dirty because the flash driver returned retlen zero
Write verify error (ECC OK or unused) at 02bc0000. Wrote:
00000000: 85 19 02 e0 6d 00 00 00 a9 1b cd 45 88 12 00 00
00000010: 03 00 00 00 ff 81 00 00 aa 6b 1b 0d 80 01 00 00
00000020: a2 43 6d 38 a2 43 6d 38 a2 43 6d 38 00 00 00 00
00000030: 29 00 00 00 80 01 00 00 06 00 ff 7f 95 9b 47 5b
00000040: 09 78 d8 b5 78 5e 62 65 60 60 08 01 62 42 a0 38
经查:
K9F1G08U0E vs K9F1G08U0D Timing difference
tR tPROG tBERS NOP
K9F1G08U0E Max. 40us Max. 900us Max. 16ms 1
K9F1G08U0D Max. 40us Max. 750us Max. 10ms 4
2. if timing is OK, please kindly know the 21nm SLC NOP=1 , not 4
it means every NAND page you can just write one time,
if you want to write the data in the same page again, you need to erase first
3. please note :
due to 21nm SLC NOP=1, it means you can not use "Partial Program" for it
if you use this function in our 42 nm SLC and want to change to 21nm SLC
the way to solve it is modify host FTL algorithm
