This thread has been locked.
If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.
我在进行C6678的DDR3内存设计,在设计C6678的DDR电路时,DQ,DQS,CK的阻抗设计为40Ω,80Ω,80Ω.还是设计为50Ω,100Ω,100Ω.
您好，
很理解您的这个疑惑，请参考下面的链接
(+) (+)TMS320C6678：DDR3 单端走线阻抗需要说明 - 处理器论坛 - 处理器 - TI E2E 支持论坛
