TMUXHS4412: TMUXHS4412: Internal ESD Diode Interference on ATE Open-Short Test - Risk of False PASS

Part Number: TMUXHS4412

We are using TMUXHS4412 in an ATE loopback test for MIPI interfaces. The configuration is: ATE Tester ↔ TMUXHS4412 ↔ DUT.

We have a critical concern regarding the open-short (OS) / continuity test.

Background & Concern:
Our analysis suggests that the TMUXHS4412 has internal ESD diodes on its high-speed differential I/O pins. While these are vital for device protection, we are concerned they will create a parallel current path that directly corrupts our DUT's OS test measurement.

The Core Problem (False PASS Risk):
The OS test works by injecting a small DC test current (e.g., 0.2 mA) to forward-bias the DUT's internal ESD protection diode and measure the resulting voltage drop (e.g., ~0.6 V).

If the DUT's own ESD diode is open-circuited (a fail condition), the current would normally have no path, resulting in a voltage measurement near 0V and a correct FAIL verdict.

However, with the TMUXHS4412 in the path, we fear the ATE current will be shunted through the TMUXHS4412's internal diode. Consequently, the ATE would still measure a normal forward voltage drop, incorrectly reporting the DUT as PASS (a false PASS) even though its ESD diode is faulty.

Request for Clarification:

  1. Could you please confirm the exact ESD protection structure on the high-speed I/O pins (e.g., is there a diode from I/O to GND)?

  2. In a scenario where the DUT's internal diode is open, could the TMUXHS4412's own ESD structure create this misleading current path, leading to a false PASS on the ATE OS test?

  3. Is AC-coupling the only reliable solution to isolate this DC path, and if we apply it, what is the correct biasing scheme for the TMUXHS4412 to ensure it stays within its valid operating conditions (CMV 0V to 1.8V)?

We look forward to your guidance on this critical issue.

OS TEST.png

  • Thank you for your attention to TI products. We are verifying your issue, please wait for our reply.

  • 你好,

    1. 是的,I/O 和 GND 之间应该有二极管。
    2. 只有当多路复用器断电时才会出现问题。只要多路复用器通电,就不会有单独的电流通路。
    3. 交流耦合可能是这里最好的解决方案。是否存在多路复用器两端的电压或电流会超出绝对最大值的情况?或者说,交流耦合只是为了安全起见?

    一般来说,我会建议在ATE DUT测试中使用高压多路复用器,例如我们的72xx系列,尤其是在信号为直流的情况下。您选择高速多路复用器而不是普通模拟多路复用器的原因是什么?

    最好的,
    凯蒂

  • 2. 只有当多路复用器断电时才会出现问题。只要多路复用器通电,就不会有单独的电流通路。

    reply,测试open short场景,DUT断电,即使多路复用器通电,机台sink -200uA电流,是否也会受到TMUXHS4412 ESD diode的影响?

    3. 交流耦合可能是这里最好的解决方案。

    reply,mipi lpbk测试要求DC 耦合,需要高速复用器,设计目的通过复用器切换DB0P/N 到tester测试DC再通过DB0P/N 环回到DUT RX, 图片没有画全。