816x系列使用新的NandFlash K9F1G08U0E-SCB0 启动出现异常

Away.liu Away.liu

Hi all:

使用dvr4.1的开发包,以前用的海力士的NandFlash 使用正常,最近更新到新的NandFlash K9F1G08U0E-SCB0 烧写正常,启动过程中出现:

Empty flash at 0x0251fcb4 ends at 0x0251fcb8
jffs2_scan_eraseblock(): Magic bitmask 0x1985 not found at 0x02520000: 0xdf35 instead

...

000007d0: 00 00 ff ff ff ff ff ff 00 97 ff ff ff ff 00 00
000007e0: ff ff ff ff ff ff ff ff 44 00 00 00 1d fb f7 88
000007f0: ff ff ff ff 02 00 ff ff ed 81 ff ff ff ff 00 00
Write of 68 bytes at 0x02ba07e4 failed. returned -5, retlen 0
Not marking the space at 0x02ba07e4 as dirty because the flash driver returned retlen zero
Write verify error (ECC OK or unused) at 02bc0000. Wrote:
00000000: 85 19 02 e0 6d 00 00 00 a9 1b cd 45 88 12 00 00
00000010: 03 00 00 00 ff 81 00 00 aa 6b 1b 0d 80 01 00 00
00000020: a2 43 6d 38 a2 43 6d 38 a2 43 6d 38 00 00 00 00
00000030: 29 00 00 00 80 01 00 00 06 00 ff 7f 95 9b 47 5b
00000040: 09 78 d8 b5 78 5e 62 65 60 60 08 01 62 42 a0 38

经查:

更新的nand和以前的nand主要区别如下:

1. please check the below timing first.
K9F1G08U0E vs K9F1G08U0D Timing difference
　 tR tPROG tBERS NOP
K9F1G08U0E Max. 40us Max. 900us Max. 16ms 1
K9F1G08U0D Max. 40us Max. 750us Max. 10ms 4

2. if timing is OK, please kindly know the 21nm SLC NOP=1 , not 4
    it means every NAND page you can just  write one time,
     if you want to write the data in the same page again, you need to erase first

3. please note :
   due to 21nm SLC NOP=1, it means you can not use "Partial Program"  for it
   if you use this function in our 42 nm SLC and want to change to 21nm SLC
    the way to solve it is modify host FTL algorithm

相对于以前与海力士兼容的版本0D版本来说,时序变宽, NOP由以前的4个变成一个NOP,好像是512的子页操作取消了:

以前的一个页面可以分成4个子页来写，每个子页就是512，但是U0E的NOP是1，所以应该说就不支持子页操作了。

看打印信息像是nand driver出现了问题,但不知道从何改起,改了些地方都没有效果,请问还有此型号的flash驱动更新或支持?

10 年多前