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SN65HVD3082E: 这款芯片AB端上拉电阻和下拉电阻应该设计成多少

Part Number: SN65HVD3082E

目前我司用这款芯片,采购到不同产地的芯片,现在测量AB之间内阻有很大差异,原来用的是AB之间内阻420kR左右,没加上拉电阻和下拉电阻,AB间120R电阻,能正常使用;这次采购芯片AB间内阻130kR,在不加上下拉电阻的情况下,AB间仍然是120R电阻,无法正常通讯。请问为什么有这么大差异?具体上下拉电阻应该设计成多少?