In our design, we have the input of 1P1G125QDCKRQ1 ramping up earlier than it's supply voltage, will this cause chip damage or abnormal performance？
I also captured oscillating output of this chip while the input kept high, is this phenomena caused by chip damage?
您好，
In our design, we have the input of 1P1G125QDCKRQ1 ramping up earlier than it's supply voltage, will this cause chip damage or abnormal performance？
SN74LVC1G125-Q1支持的推荐输入电压范围到5.5V，因此输入电压大于供电电压是没有问题的。
I also captured oscillating output of this chip while the input kept high, is this phenomena caused by chip damage?
SN74LVC1G125-Q1是CMOS输入，如下截图所示CMOS输入结构，当输入沿比较缓慢时，图中的输入端的两个MOSFET有可能会同时导通，这会产生较大的直通电流，若长时间处于这种状态，有可能会烧毁设备。也可能会上下管来回切换导通，这样输出会在低和高状态之间不可控制地振荡。因此，对于这种CMOS器件，数据表定义了防止发生这种情况的最小输入变化速率Δt/Δv ，SN74LVC1G125-Q1的如下截图所示。
您所附输出波形振荡很可能是由于输入信号沿太缓慢造成的，因此建议您检查输入信号的斜率是否满足datasheet 要求。
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