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https://e2e.ti.com/support/microcontrollers/arm-based-microcontrollers-group/arm-based-microcontrollers/f/arm-based-microcontrollers-forum/878450/tms570lc4357-memory
您好！
如果启用了高速缓存、则高速缓存由 GCLK 计时(无等待状态)。
对于 SRAM、它由 HCLK 计时并被限制为最大150MHz、并且数据等待状态= 0。
对于闪存、 L2闪存由 HCLK 计时、并限制为最大150MHz、且等待状态= 0~3。 闪存可支持高达45MHz 的零数据等待状态。
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