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器件型号：BQ27411-G1 /*
Change Design Capacity to 2200mAh
*/
I2C Write 0x8000 to 0x00 //UNSEAL it by sending 0x8000 to Control() (0x00 and 0x01) twice
I2C Write 0x8000 to 0x00
I2C Write 0x0013 to 0x00 //Send SET_CFGUPDATE subcommand, Control(0x0013)
I2C Read 0x06 //Confirm CFGUPDATE mode by polling Flags() register until bit 4 is set
I2C Write 0x00 to 0x61 //Write 0x00 using BlockDataControl() command (0x61) to enable block data memory control
I2C Write 0x52 to 0x3E //Write 0x52 using the DataBlockClass() command (0x3E) to access the State subclass (82 decimal, 0x52 hex) containing the Design Capacity parameter
I2C Write 0x00 to 0x3F //Write the block offset location using DataBlock() command (0x3F).
//Note: To access data located at offset 0 to 31, use offset = 0x00. To access data located at offset 32 to 41, use offset = 0x01.
I2C Read 0x60 //Read the 1-byte checksum using the BlockDataChecksum() command (0x60) (Obtained checksum = 0x12)
I2C Read 0x4A //Read both Design Capacity bytes starting at 0x4A (offset = 10). Block data starts at 0x40, so to read the data of a specific offset, use address 0x40 + mod(offset, 32).
I2C Read 0x4B
I2C Write 0x08 to 0x4A //Write both Design Capacity bytes starting at 0x4A (offset = 10). the new value is 2200 mAh. (0x0898 hex)
I2C Write 0x98 to 0x4B
I2C Write 0x72 to 0x60 //Write New Checksum (0x72 by checksum calculation as mentioned in technical reference)
I2C Write 0x0042 to 0x00 //Soft Reset to exit CFGUPDATE Mode
I2C Read 0x06 //Confirm CFGUPDATE has been exited by polling Flags() register until bit 4 is cleared.
I2C Write 0x0020 to 0x00 //Return to SEALED mode/*
Change clear the OpConfig[BIE] to 0
*/
I2C Write 0x8000 to 0x00 //UNSEAL it by sending 0x8000 to Control() (0x00 and 0x01) twice
I2C Write 0x8000 to 0x00
I2C Write 0x0013 to 0x00 //Send SET_CFGUPDATE subcommand, Control(0x0013)
I2C Read 0x06 //Confirm CFGUPDATE mode by polling Flags() register until bit 4 is set
I2C Write 0x00 to 0x61 //Write 0x00 using BlockDataControl() command (0x61) to enable block data memory control
I2C Write 0x40 to 0x3E //Write 0x52 using the DataBlockClass() command (0x3E) to access the State subclass (64 decimal, 0x40 hex) containing the OpConfig parameter
I2C Write 0x00 to 0x3F //Write the block offset location using DataBlock() command (0x3F).
//Note: To access data located at offset 0 to 31, use offset = 0x00. To access data located at offset 32 to 41, use offset = 0x01.
I2C Read 0x60 //Read the 1-byte checksum using the BlockDataChecksum() command (0x60) (Obtained checksum = 0x5E)
I2C Read 0x40 //Read both Design Capacity bytes starting at 0x40 (offset = 00). Block data starts at 0x40, so to read the data of a specific offset, use address 0x40 + mod(offset, 32).
I2C Read 0x41
I2C Write 0x05 to 0x4A //Write both Design Capacity bytes starting at 0x4A (offset = 10). the new value is 2200 mAh. (0x05F8 hex)
I2C Write 0xF8 to 0x4B
I2C Write 0x61 to 0x60 //Write New Checksum (0x61 by checksum calculation as mentioned in technical reference)
I2C Write 0x0042 to 0x00 //Soft Reset to exit CFGUPDATE Mode
I2C Read 0x06 //Confirm CFGUPDATE has been exited by polling Flags() register until bit 4 is cleared.
I2C Write 0x0020 to 0x00 //Return to SEALED mode
嗨、朋友们！
我尝试使用 BQ27411-G1A 捕获锂离子电池的电压、电流和充电状态(SOC)。 我能够读取电压、电流和功率、但我得到的 SOC 值是错误的。 我有时会获得100%的 SOC 值、有时会获得0%。
通过读取标志寄存器(0x06-0x07)、我发现 IC 无法检测电池、且标志[BAT_DET]始终为0。 然后、我尝试重新配置 OpConfig 寄存器(0x3A-0x3B)、以将 OpConfig[BIE]引脚更改为0、以便我可以在电池插入时手动为 IC 提供输入。 以下是我为此采取的步骤。
- 使用直流适配器在不使用电池的情况下为电路板供电。
- 将"设计容量"值更改为2200mAh (我使用3.7V、2200mAh、锂离子18650圆柱形电池)。 附加了伪代码。
- 将"OpConfig"寄存器值更改为0x05F8、从而将 OpConfig[BIE]清零。 执行此步骤可以禁用[BIE]位并从主机手动进入电池插入模式。 附加了伪代码。
- 插入电池。
- 由于 OpConfig [BIE]位为0、使用控制寄存器(0x0000)写入了 BAT_INSERT 子命令(0x000C)以强制设置 Flags ()[BAT_DET]位。
"I2C 写入0x000C 至0x00"
我尝试读取 SOC 寄存器(0x1C-0x1D)、但我得到的值是0x00、标志位[BAT_SET]始终会清零。 但电压、电流和功率值是正确的。
过程中是否漏掉了任何东西？ 或逻辑/代码有任何问题？
感谢任何帮助。
-提前感谢
哈里
