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MCT8316Z 器件包含一个集成的 100mΩ(高侧和低侧 FET 的导通电阻组合)NMOS FET,它们以三相桥配置连接。除了提供 100% 占空比支持外,倍压器电荷泵还可以在宽工作电压范围内为高侧 NMOS FET 提供适当的栅极偏置电压。内部线性稳压器为低侧 MOSFET 提供栅极偏置电压。该器件具有三个 VM 电机电源引脚,它们将一起连接到电机电源电压。