现在我这边使用BQ40Z80来设计一块新的BMS板子，充放电MOS回路是各并联5个大功率的MOS管。所以需要了解一下CHG/DSG驱动电流的情况，但我在规格书上没有找到具体的资料。我不确定BQ40Z80的充放电时是否能驱动的了并联5个MOS管。需要麻烦帮忙确认一下。谢谢。
MOS管的资料：NTMFS5C410NLT1G
Qg：143nC(Vgs=10V)；Rds：0.82mΩ(Vgs=10V)最大值；Vds：40V；I：330A；Vgs(th)=1.2V；Rg：1.0Ω；VON：11.5V
您好，请参考数据手册的FET drive capabilities
The higher the gate capacitance or the number of gates you're driving will reduce how fast the FETs can turn on/off. Also I would recommend increasing the PBI capacitance (to 10uF) if you are planning on driving higher capacitance FETs. Sometimes with large gate capacitance the PBI will drain causing a momentary gauge brownout.
详细的资料可以参考BQ40Z80 FAQ， driving multiple FETs in parallel which is on the BQ40Z80 FAQ page. https://e2e.ti.com/support/power-management-group/power-management/f/power-management-forum/1127899/faq-bq40z80-faqs?tisearch=e2e-sitesearch&keymatch=faq%3Atrue
