C6678 寄存器写出现错误 Debug 时出现程序加载错误 Trouble Writing Memory Block at 0x8ec600 on Page 0 of Length 0x7cc0

Jack Dong

Intellectual 775 points

各位大神，我有以下问题请教，希望百忙中抽点时间回答，谢谢！

当FFT点数为32K浮点复数时会出现如下问题（FFT点数为4K,8K和16K时没有出现）：

数据存在.DDR3段，

DDR3定义为：

DDR3:org 0x80000000 len=0x10000000

.DDR3:load >>DDR3

C66xx_0: Trouble Writing Memory Block at 0x8ec600 on Page 0 of Length 0x7cc0: (Error -1190 @ 0x8EC600) Unable to access device memory. Verify that the memory address is in valid memory. If error persists, confirm configuration, power-cycle board, and/or try more reliable JTAG settings (e.g. lower TCLK). (Emulation package 5.0.569.0)
C66xx_0: GEL: File: F:\13516test\DSPF_sp_fftSPxSP_66_LE_ELF\Debug\DSPF_sp_fftSPxSP_66_LE_ELF.out: Load failed.

请问是不是我的CMD文件中DDR3的定义有问题？还是GEL文件有问题？网上也有人说是C6678无法load外部扩展的DDR3等等。。。

12 年多前

0 noaming 12 年多前

Guru 52751 points

使用MCSDK中提供的GEL文件，加载GEL后，可以将程序load到外部DDR3。

你使用FFT点数为4K,8K和16K时，load到DDR3中有问题吗？

0 Jack Dong 12 年多前回复 noaming

Intellectual 775 points

求解load 在CMD文件中定义数据段时的具体含义

现在4K,8K，6K，64k时，都可以load到DDR3中，但是存在以下问题：在定义DDR3段时，用不用load语句，指令运行周期数差别比较大，请大神分析原因。

以64k的复数浮点FFT为例，

定义DDR3段的时候采用.DDR3:load>>DDR3 采用load指令时指令周期数CYCLES:3096024

定义DDR3段的时候采用.DDR3:>>DDR3没有采用load指令时指令周期数CYCLES:54106352

相差数十倍，求原因。

测试结果如下：
数据存放在DDR3中定义DDR3段的时候采用.DDR3:load>>DDR3 采用load指令

FFT点数运行时间运行指令周期数数

N = 8 radix = 2 TIME: 0.215000 us CYCLES:215

N = 16 radix = 4 TIME: 0.243000 us CYCLES:243

N = 32 radix = 2 TIME: 0.401000 us CYCLES:401

N = 64 radix = 4 TIME: 0.617000 us CYCLES:617

N = 128 radix = 2 TIME: 1.207000 us CYCLES:1207

N = 256 radix = 4 TIME: 2.168000 us CYCLES:2168

N = 512 radix = 2 TIME: 4.793000 us CYCLES:4793

N = 1024 radix = 4 TIME: 9.256000 us CYCLES:9256

N = 2048 radix = 2 TIME: 21.034000 us CYCLES:21034

N = 4096 radix = 4 TIME: 51.208000 us CYCLES:51208

N = 8192 radix = 2 TIME: 266.581000 us CYCLES:266581

N = 16384 radix = 4 TIME: 539.959000 us CYCLES:539959

N = 32768 radix = 2 TIME: 1512.223000 us CYCLES:1512223

N = 65536 radix = 4 TIME: 3096.024000 us CYCLES:3096024

数据存放在DDR3中定义DDR3段的时候采用.DDR3:>>DDR3没有采用load指令

FFT点数运行时间运行指令周期数数

N = 8 radix = 2 TIME: 1.603000 us CYCLES:1603

N = 16 radix = 4 TIME: 3.136000 us CYCLES:3136

N = 32 radix = 2 TIME: 9.645000 us CYCLES:9645

N = 64 radix = 4 TIME: 19.355000 us CYCLES:19355

N = 128 radix = 2 TIME: 52.260000 us CYCLES:52260

N = 256 radix = 4 TIME: 104.660000 us CYCLES:104660

N = 512 radix = 2 TIME: 260.284000 us CYCLES:260284

N = 1024 radix = 4 TIME: 480.613000 us CYCLES:480613

N = 2048 radix = 2 TIME: 1040.438000 us CYCLES:1040438

N = 4096 radix = 4 TIME: 2064.545000 us CYCLES:2064545

N = 8192 radix = 2 TIME: 4781.424000 us CYCLES:4781424

N = 16384 radix = 4 TIME: 10776.016000 us CYCLES:10776016

N = 32768 radix = 2 TIME: 25084.586000 us CYCLES:25084586

N = 65536 radix = 4 TIME: 54106.352000 us CYCLES:54106352

0 noaming 12 年多前回复 Jack Dong

Guru 52751 points

你好，cmd中的load是一个关键字，并不是指令。此关键字可以省略。

具体能把你的CMD文件贴上来看看有什么不一样吗？

0 Jack Dong 12 年多前回复 noaming

Intellectual 775 points

两种情况的cmd文件仅仅在定义段.DDR3时加与，不加load

定义段.DDR3时，加load的CMD文件

-heap 0x8000 -stack 0xC000

MEMORY {

L2SRAM (RWX) : org = 0x800000, len = 0x100000

MSMCSRAM (RWX) : org = 0xc000000, len = 0x200000

DDR3(RWX) : org = 0x80000000,len = 0x10000000

}

SECTIONS {

.kernel: {

*.obj (.text:optimized) { SIZE(_kernel_size) }

}

.text: load >> L2SRAM

.text:touch: load >> L2SRAM

GROUP (NEAR_DP)

{

.neardata .rodata .bss

} load > L2SRAM

.far: load >> L2SRAM

.fardata: load >> L2SRAM

.data: load >> L2SRAM

.switch: load >> L2SRAM

.stack: load > L2SRAM

.args: load > L2SRAM align = 0x4, fill = 0 {_argsize = 0x200; }

.sysmem: load > L2SRAM

.cinit: load > L2SRAM

.const: load > L2SRAM START(const_start) SIZE(const_size)

.pinit: load > L2SRAM .

cio: load >> L2SRAM

xdc.meta: load >> L2SRAM, type = COPY

//.MSMCSRAM: >> MSMCSRAM

.DDR3:load>> DDR3

}

定义段.DDR3时，不加load的CMD文件

-heap 0x8000 -stack 0xC000

MEMORY {

L2SRAM (RWX) : org = 0x800000, len = 0x100000

MSMCSRAM (RWX) : org = 0xc000000, len = 0x200000

DDR3(RWX) : org = 0x80000000,len = 0x10000000

}

SECTIONS {

.kernel: {

*.obj (.text:optimized) { SIZE(_kernel_size) }

}

.text: load >> L2SRAM

.text:touch: load >> L2SRAM

GROUP (NEAR_DP)

{

.neardata .rodata .bss

} load > L2SRAM

.far: load >> L2SRAM

.fardata: load >> L2SRAM

.data: load >> L2SRAM

.switch: load >> L2SRAM

.stack: load > L2SRAM

.args: load > L2SRAM align = 0x4, fill = 0 {_argsize = 0x200; }

.sysmem: load > L2SRAM

.cinit: load > L2SRAM

.const: load > L2SRAM START(const_start) SIZE(const_size)

.pinit: load > L2SRAM .

cio: load >> L2SRAM

xdc.meta: load >> L2SRAM, type = COPY

//.MSMCSRAM: >> MSMCSRAM

.DDR3:>> DDR3

}

0 c s48 6 年多前回复 Jack Dong

Prodigy 70 points

我有一个相似的问题需要解决：

TMS320C671X: Trouble Writing Memory Block at 0x0 on Page 0 of Length 0x1e40: This operation is not supported by this driver
TMS320C671X: GEL: File: C:\Users\WangXi\workspace_v6_0\Sinebuf\Release\Sinebuf.out: Load failed.

你们有什么好的解决方法吗

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C6678 寄存器写出现错误 Debug 时出现程序加载错误 Trouble Writing Memory Block at 0x8ec600 on Page 0 of Length 0x7cc0