利用 information memory 保存数据;原始数据通过编程器下载进去,程序如下:
#pragma location = 0x1040
__root const uint8_t INFO_1[64] = {。。。。。}
现在发现一部分MCU上电读出来的数据有FF FE之类的乱码,上电只读没有写操作。
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利用 information memory 保存数据;原始数据通过编程器下载进去,程序如下:
#pragma location = 0x1040
__root const uint8_t INFO_1[64] = {。。。。。}
现在发现一部分MCU上电读出来的数据有FF FE之类的乱码,上电只读没有写操作。
以下是相关的测试代码以及实验结果
测试代码
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//******************************************************************************
// MSP430F552x Demo - Flash In-System Programming w/ Long-Word write at 0x1800
//
// Description: This program first erases flash seg D, then it writes a 32-bit
// value to memory location 0x1800 using long-word write mode. Long-word write
// provides faster write than byte/word mode.
// ACLK = REFO = 32kHz, MCLK = SMCLK = default DCO 1048576Hz
//
// MSP430x552x
// -----------------
// /|\| XIN|-
// | | |
// --|RST XOUT|-
// | |
//
//
// Bhargavi Nisarga
// Texas Instruments Inc.
// April 2009
// Built with CCSv4 and IAR Embedded Workbench Version: 4.21
//******************************************************************************
#include <msp430.h>
int main(void)
{
unsigned long * Flash_ptrD; // Initialize Flash pointer Seg D
unsigned long value;
WDTCTL = WDTPW+WDTHOLD; // Stop WDT
Flash_ptrD = (unsigned long *) 0x1800; // Initialize Flash pointer
value = 0x12345678; // Initialize Value
FCTL3 = FWKEY; // Clear Lock bit
FCTL1 = FWKEY+ERASE; // Set Erase bit
*Flash_ptrD = 0; // Dummy write to erase Flash seg
FCTL1 = FWKEY+BLKWRT; // Enable long-word write
*Flash_ptrD = value; // Write to Flash
FCTL1 = FWKEY; // Clear WRT bit
FCTL3 = FWKEY+LOCK; // Set LOCK bit
while(1); // Loop forever, SET BREAKPOINT HERE
}
测试过程
1 在CCS内新建工程,写入代码,编译成功后连接开发板调试
可以发现程序运行后,0x1800处已经成功写入数据
2 而后板子断电,而后重新连接电脑上的uniflash来读memory,数据依然存在